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NSVS1002SLT4G PDF预览

NSVS1002SLT4G

更新时间: 2024-02-21 09:08:50
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 93K
描述
Power Bipolar Transistor

NSVS1002SLT4G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.74峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NSVS1002SLT4G 数据手册

 浏览型号NSVS1002SLT4G的Datasheet PDF文件第2页浏览型号NSVS1002SLT4G的Datasheet PDF文件第3页浏览型号NSVS1002SLT4G的Datasheet PDF文件第4页 
NSVS1002SL  
Product Preview  
Bipolar Transistor  
100 V, 3 A, Low VCE(sat) NPN Single DPAK  
This device is bipolar junction transistor featuring high current, low  
saturation voltage, and high speed switching.  
Suitable for automotive applications. AEC−Q101 qualified and  
PPAP capable.  
www.onsemi.com  
4
Features  
2
1
Complement to NSVS1001SL  
Large Current Capacitance  
Low Collector to Emitter Saturation Voltage  
High−Speed Switching  
3
DPAK  
CASE 369C  
ELECTRICAL CONNECTION  
High Allowable Power Dissipation  
AEC−Q101 Qualified and PPAP Capable  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Typical Applications  
Load Switch  
Gate Driver Buffer  
DC−DC Converters  
MARKING DIAGRAM  
Specifications  
AYWW  
NVS  
1002G  
ABSOLUTE MAXIMUM RATING at Ta = 25°C  
Parameter  
Symbol  
Value  
Unit  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
V
CBO  
V
CEO  
V
EBO  
120  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
100  
V
7
V
= Pb−Free Package  
I
C
3
A
Collector Current (Pulse)  
Collector Dissipation (Note 1)  
I
5
A
CP  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
P
1
15  
W
C
PC (Tc = 25°C)  
Junction Temperature  
Storage Temperature  
Tj  
175  
°C  
°C  
Tstg  
55 to +175  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Surface mounted on FR board.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
June, 2019 − Rev. P0  
NSVS1002SL/D  
 

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