Datasheet > NSVS50031SB3T1G

NSVS50031SB3T1G

更新时间： 2023-09-03 20:28:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
7页	165K
描述
双极晶体管，50V，3A，低饱和压，NPN 单

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NSVS50031SB3T1G 数据手册

NSVS50030SB3,

NSVS50031SB3

Bipolar Transistor (- )50 V,

(- )3 A, Low V_CE(sat),

(PNP)NPN Single

www.onsemi.com

This device is bipolar junction transistor featuring high current, low

saturation voltage, and high speed switching.

Suitable for motor driver, relay driver, DC−DC converter of

automotive applications. AEC−Q101qualified and PPAP capable.

ELECTRICAL CONNECTION

Features

• Large Current Capacitance

• Low Collector to Emitter Saturation Voltage

• High−Speed Switching

• High Allowable Power Dissipation

• AEC−Q101Qualified and PPAP Capable

• Pb−Free, Halogen Free and RoHS Compliance

NSVS50030SB3

NSVS50031SB3

• Ultra Small Package Facilitates Miniaturization in End Products

(Mounting Height: 0.9 mm)

Typical Applications

• DC / DC Converter

• Relay Drivers, Lamp Drivers, Motor Drivers

• Flash

CPH3

CASE 318BA

Specifications

MARKING DIAGRAMS

ABSOLUTE MAXIMUM RATINGS at T = 25°C

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Value

(−50) 100

(−)50

Unit

XXXM

CBO

CES

CEO

EBO

(−)6

XXX

= HAE: NSVS50030SB3

= HCE: NSVS50031SB3

= Single Digit Date Code

(−)3

Collector Current (Pulse)

Base Current

(−)6

(−)600

1.1

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Collector Dissipation (Note 1)

Junction Temperature

Storage Temperature

Tstg

175

−55 to +175

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on ceramic substrate. (600 mm x 0.8 mm)

Publication Order Number:

December, 2018 − Rev. 1

NSVS50030SB3/D

12 3 4 5 6 7

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