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NSVS40300CTWG PDF预览

NSVS40300CTWG

更新时间: 2024-01-09 19:27:22
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 175K
描述
Small Signal Bipolar Transistor

NSVS40300CTWG 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.8峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NSVS40300CTWG 数据手册

 浏览型号NSVS40300CTWG的Datasheet PDF文件第2页浏览型号NSVS40300CTWG的Datasheet PDF文件第3页浏览型号NSVS40300CTWG的Datasheet PDF文件第4页浏览型号NSVS40300CTWG的Datasheet PDF文件第5页浏览型号NSVS40300CTWG的Datasheet PDF文件第6页 
Bipolar Power Transistors  
40 V, 3.0 A, Low VCE(sat)  
PNP Transistor  
NSVS40300CT  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
www.onsemi.com  
transistors are surface mount devices featuring ultralow saturation  
voltage, V , and high current gain capability. These are designed  
CE(sat)  
for use in lower voltage, high speed switching applications where  
affordable efficient energy control is important.  
PNP TRANSISTOR  
3.0 AMPERES  
40 VOLTS  
Housed in an ultra slim LFPAK4 5x6 package, typical applications  
are DCDC converters and power management in portable and battery  
powered products such as cellular and cordless phones, digital  
cameras and MP3 players where PCB space is at a premium. The  
LFPAK4 5x6 package also contains wettable flanks which are a  
requirement for the automotive industry’s optical inspection methods  
that are implemented in end applications such as air bag deployment,  
powertrain control units, and instrument clusters.  
C 5  
Features  
B 4 E 1,2,3  
Complement to NSVS40301CT  
Ultraslim LFPAK4 Package (5 x 6 mm) with Wettable Flanks  
Schematic  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
LFPAK4 5x6  
CASE 760AB  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
W
MARKING DIAGRAM  
5
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
40  
CB  
EB  
XXXXX  
XXX  
ALLYW  
V
6.0  
1.0  
3.0  
5.0  
Base Current Continuous  
Collector Current Continuous  
Collector Current Peak  
Total Power Dissipation  
I
B
C
I
1
2
3
4
I
CM  
(Top View)  
P
D
XXXXXX  
= Specific Device Code  
= Assembly Location  
= Wafer Lot  
Total P @ T = 25°C (Note 1)  
2.0  
0.80  
D
D
A
Total P @ T = 25°C (Note 2)  
A
LL  
Y
A
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
= Year  
= Work Week  
W
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
1. Mounted on 1sq. (645 sq. mm) Collector pad on FR4 bd material.  
2. Mounted on 0.012sq. (7.6 sq. mm) Collector pad on FR4 bd material.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
November, 2019 Rev. 0  
NSVS40300CT/D  
 

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