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NSVS1002CLTWG PDF预览

NSVS1002CLTWG

更新时间: 2024-02-14 12:57:08
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
4页 230K
描述
Power Bipolar Transistor

NSVS1002CLTWG 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LFPAK-8Reach Compliance Code:unknown
风险等级:5.74外壳连接:COLLECTOR
最大集电极电流 (IC):2.5 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):140
JESD-30 代码:R-PDSO-X5元件数量:1
端子数量:5最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):15 W参考标准:AEC-Q101
表面贴装:YES端子形式:UNSPECIFIED
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
VCEsat-Max:0.14 VBase Number Matches:1

NSVS1002CLTWG 数据手册

 浏览型号NSVS1002CLTWG的Datasheet PDF文件第2页浏览型号NSVS1002CLTWG的Datasheet PDF文件第3页浏览型号NSVS1002CLTWG的Datasheet PDF文件第4页 
Bipolar Transistor  
100 V, 2.5 A, Low VCE(sat) NPN Single  
LFPAK  
Product Preview  
NSS1002CLT  
This device is bipolar junction transistor featuring high current, low  
saturation voltage, and high speed switching.  
Suitable for automotive applications. AEC−Q101 qualified and  
PPAP capable.  
www.onsemi.com  
Features  
Complement to NSS1001CLT  
Large Current Capacitance  
LFPAK8 3.3x3.3, 0.65P  
CASE 760AD  
Low Collector to Emitter Saturation Voltage  
Thin Profile LFPAK8 3.3 x 3.3 mm Package  
High−Speed Switching  
ELECTRICAL CONNECTION  
High Allowable Power Dissipation  
AEC−Q101 Qualified and PPAP Capable  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Typical Applications  
Load Switch  
Gate Driver Buffer  
DC−DC Converters  
MARKING DIAGRAM  
XXXXX  
XXXXX  
AWLYW  
Specifications  
ABSOLUTE MAXIMUM RATING at Ta = 25°C  
Parameter  
Symbol  
Value  
Unit  
V
XXXX = Specific Device Code  
A
= Assembly Location  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
V
CBO  
V
CEO  
V
EBO  
120  
WL = Wafer Lot  
100  
V
Y
= Year  
6.5  
V
W
= Work Week  
I
C
2.5  
A
Collector Current (Pulse)  
Collector Dissipation (Note 1)  
I
4
1.2  
A
CP  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
P
W
C
dimensions section on page 2 of this data sheet.  
PC (Tc = 25°C)  
15  
Junction Temperature  
Storage Temperature  
Tj  
175  
°C  
°C  
Tstg  
55 to +175  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Surface mounted on FR board  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
March, 2020 − Rev. P0  
NSS1002CLT/D  
 

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