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NSVRB751V40T1G PDF预览

NSVRB751V40T1G

更新时间: 2023-06-19 14:31:38
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管肖特基二极管
页数 文件大小 规格书
4页 123K
描述
30 V 肖特基二极管

NSVRB751V40T1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PDSO-G2Reach Compliance Code:compliant
Factory Lead Time:8 weeks风险等级:1.4
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.37 V
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.5 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.03 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.2 W参考标准:AEC-Q101
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

NSVRB751V40T1G 数据手册

 浏览型号NSVRB751V40T1G的Datasheet PDF文件第2页浏览型号NSVRB751V40T1G的Datasheet PDF文件第3页浏览型号NSVRB751V40T1G的Datasheet PDF文件第4页 
RB751V40T1G  
Schottky Barrier Diode  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
http://onsemi.com  
Features  
Extremely Fast Switching Speed  
Extremely Low Forward Voltage -- 0.28 Volts (Typ) @ IF = 1 mAdc  
Low Reverse Current  
40 V SCHOTTKY  
BARRIER DIODE  
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS  
Compliant  
1
2
CATHODE  
ANODE  
2
MAXIMUM RATINGS  
Rating  
Peak Reverse Voltage  
Reverse Voltage  
Symbol  
Value  
40  
Unit  
V
1
V
RM  
SOD--323  
CASE 477  
STYLE 1  
V
30  
Vdc  
mA  
mA  
R
Forward Continuous Current (DC)  
Peak Forward Surge Current  
Electrostatic Discharge  
I
30  
F
I
500  
FSM  
MARKING DIAGRAM  
E
HBM Class: 1C  
MM Class: A  
SD  
5E MG  
G
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR--5 Board,  
P
200  
mW  
D
5E = Specific Device Code  
(Note 1) T = 25C  
A
M
= Date Code  
Derate above 25C  
1.57  
635  
mW/C  
C/W  
G
= Pb--Free Package  
(Note: Microdot may be in either location)  
Thermal Resistance  
Junction--to--Ambient  
R
θ
JA  
Junction and Storage  
Temperature Range  
T , T  
-- 5 5 t o  
+150  
C  
J
stg  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR--5 Minimum Pad  
Device  
Package  
Shipping  
RB751V40T1G SOD--323  
(Pb--Free)  
3000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2010 -- Rev. 4  
RB751V40T1/D  

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