Datasheet > NSVR351SDSA3

NSVR351SDSA3

更新时间： 2024-02-14 17:34:58

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	308K
描述
Schottky Barrier Diode

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NSVR351SDSA3 数据手册

NSVR351SDSA3

Advance Information

Schottky Barrier Diode

for Mixer and Detector

This schottky barrier diode is designed to realize compact and efficient

designs. Two schottky barrier diodes are incorporated in one SC-59

package. The use of dual schottky barrier diodes can reduce both system

cost and board space. This schottky barrier diode is AEC-Q101 qualified

and PPAP capable for automotive applications.

www.onsemi.com

5 V, 30 mA

C = 0.69 pF typ

Shottky Barrier Diode

Features

Series connection of 2 elements in a small-sized package

 Small Interterminal Capacitance (C = 0.69 pF typ)

 Small Forward Voltage (V = 0.23 V max)

 Pb-Free, Halogen Free and RoHS compliance

 AEC-Q101 qualified and PPAP capable

SC-59 / CP3

Typical Applications

 Level Detector for Radio

ELECTRICAL CONNECTION

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1)

Parameter

Symbol

Value

Unit

1 : Anode

2 : Cathode

Reverse Voltage

3 : Anode / Cathode

Forward Current

Operating Junction and Storage Temperature

55 to 125

C

j, stg

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should

not be assumed, damage may occur and reliability may be affected.

MARKING

ORDERING INFORMATION

See detailed ordering and shipping

information on page 4 of this data sheet

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

July 2016 - Rev. P1

Publication Order Number :

NSVR351SDSA3/D

12 3 4

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