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NSVRB521S30T5G PDF预览

NSVRB521S30T5G

更新时间： 2023-06-19 14:31:37
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管
页数 文件大小 规格书
3页 77K
描述
肖特基势垒二极管

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中文翻译

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NSVRB521S30T5G 数据手册

 浏览型号NSVRB521S30T5G的Datasheet PDF文件第2页浏览型号NSVRB521S30T5G的Datasheet PDF文件第3页 
RB521S30T1G,  
RB521S30T5G  
Schottky Barrier Diode  
These Schottky barrier diodes are designed for high−speed  
switching applications, circuit protection, and voltage clamping.  
Extremely low forward voltage reduces conduction loss. Miniature  
surface mount package is excellent for hand−held and portable  
applications where space is limited.  
http://onsemi.com  
Features  
30 V SCHOTTKY  
BARRIER DIODE  
• Extremely Fast Switching Speed  
• Extremely Low Forward Voltage 0.5 V (max) @ I = 200 mA  
F
• Low Reverse Current  
1
2
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
CATHODE  
ANODE  
Compliant  
MAXIMUM RATINGS  
2
Rating  
Symbol  
Value  
30  
Unit  
Vdc  
mA  
A
1
Reverse Voltage  
V
R
SOD−523  
CASE 502  
Forward Current DC  
I
F
200  
1.0  
Peak Forward Surge Current (Note 1)  
I
FSM  
ESD Rating: Class 1C per Human Body Model  
ESD Rating: Class C per Machine Model  
MARKING DIAGRAM  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. 60 Hz for 1 cycle.  
5M M G  
G
1
2
5M  
M
G
= Device Code  
= Date Code*  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
(Note: Microdot may be in either location)  
Total Device Dissipation FR−5 Board,  
P
200  
mW  
*Date Code orientation may vary depending  
upon manufacturing location.  
D
(Note 2) T = 25°C  
A
Derate above 25°C  
1.57  
635  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
ORDERING INFORMATION  
Junction and Storage  
Temperature Range  
T , T  
J
−55 to +125  
stg  
†
Device  
Package  
Shipping  
2. FR−5 Minimum Pad.  
RB521S30T1G  
SOD−523  
(Pb−Free)  
4 mm Pitch  
3000/Tape & Reel  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
RB521S30T5G  
SOD−523  
(Pb−Free)  
4 mm Pitch  
8000/Tape & Reel  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Reverse Leakage  
I
−
−
30.0  
mA  
R
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
(V = 10 V)  
R
Forward Voltage  
V
−
−
0.50  
Vdc  
F
(I = 200 mA)  
F
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
July, 2011 − Rev. 6  
RB521S30T1/D  
 
123

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