Datasheet > NSVR201MXT5G

NSVR201MXT5G

更新时间： 2024-01-15 15:49:33

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	199K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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NSVR201MXT5G 数据手册

NSVR201MX

Advance Information

Schottky Barrier Diode

for Mixer and Detector

Automotive Schottky Barrier Diode designed for compact and efficient

designs. AEC-Q101 qualified Schottky Barrier Diode and PPAP capable

suitable for automotive applications.

www.onsemi.com

Features

2V, 50mA

C=0.25pF typ.

Shottky Barrier Diode

• Small Interterminal Capacitance

• Less Parasitic Components

• Small Forward Voltage

• Small-sized Package

• Pb-Free, Halogen Free and RoHS compliance

• AEC-Q101 qualified and PPAP capable

X2DFN2 1.0x0.6, 0.65P

Typical Applications

• Microwave and Milliwave Mixer

• Microwave and Milliwave Detector

ELECTRICAL CONNECTION

Cathode

Anode

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1)

Parameter

Symbol

Value

Unit

MARKING DIAGRAM

Reverse Voltage

Forward Current

°C

F M

Operating Junction and Storage Temperature

−55 to +150

J, stg

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

= Specific Device Code

= Date Code

= Pb-Free Package

■

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

June 2016 - Rev. P1

Publication Order Number :

NSVR201MX/D

12 3 4 5

中文翻译

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