NSVR0520V2T1G

更新时间： 2023-06-19 14:31:36

品牌	Logo	应用领域
安森美 - ONSEMI		整流二极管
页数	文件大小	规格书
4页	108K
描述
肖特基势垒整流器，500 mA，20 V

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中文翻译

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数据手册
替代型号

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NSVR0520V2T1G 数据手册

NSR0520V2T1G

Schottky Barrier Diode

Schottky barrier diodes are optimized for very low forward voltage

drop and low leakage current and are used in a wide range of dc−dc

converter, clamping and protection applications in portable devices.

NSR0520V2 in a SOD−523 miniature package enables designers to

meet the challenging task of achieving higher efficiency and meeting

reduced space requirements.

http://onsemi.com

Features

20 VOLT SCHOTTKY

BARRIER DIODE

• Very Low Forward Voltage Drop − 325 mV @ 100 mA

• Low Reverse Current − 8.0 mA @ 10 V

• Continuous Forward Current − 500 mA

• Power Dissipation with Minimum Trace − 170 mW

• Very High Switching Speed − 12 ns @ 10 mA

• Low Capacitance − 35 pF @ 1.0 V

CATHODE

ANODE

• This is a Pb−Free Device

Typical Applications

• LCD and Keypad Backlighting

• Camera Photo Flash

• Buck and Boost dc−dc Converters

• Reverse Voltage and Current Protection

• Clamping and Protection

SOD−523

CASE 502

PLASTIC

MARKING DIAGRAM

Markets

• Mobile Handsets

• MP3 Players

• Digital Camera and Camcorders

• Notebook PCs & PDAs

• GPS

AA MG

AA = Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

MAXIMUM RATINGS

*Date Code orientation position may vary depending

upon manufacturing location.

Rating

Symbol

Value

Unit

Vdc

Reverse Voltage

ORDERING INFORMATION

Forward Continuous Current (DC)

500

†

Device

Package

Shipping

Non−Repetitive Peak Forward Surge

2.0

FSM

Current

NSR0520V2T1G SOD−523* 3000/Tape & Reel

(Pb−Free)

ESD Rating: Human Body Model

Machine Model

ESD

Class 3B

Class C

*This package is inherently Pb−Free.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2008

Publication Order Number:

July, 2008 − Rev. 1

NSR0520V2T1/D

12 3 4

中文翻译

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NSVR0520V2T1G 替代型号

型号	品牌	替代类型	描述	数据表
NSR0520V2T5G	ONSEMI	完全替代	Schottky Barrier Diode

与NSVR0520V2T1G相关器件

型号	品牌	获取价格	描述	数据表
NSVR0520V2T5G	ONSEMI	获取价格	肖特基势垒整流器，500 mA，20 V
NSVR0530P2T5G	ONSEMI	获取价格	肖特基势垒二极管，500 mA，30 V
NSVR05F40NXT5G	ONSEMI	获取价格	肖特基势垒二极管，500 mA，40 V
NSVR0620P2T5G	ONSEMI	获取价格	500 mA, 20 V, Schottky Barrier Diode
NSVR1020MW2T1G	ONSEMI	获取价格	1.0 A, 20 V, Low VF Schottky Diode
NSVR201MX	ONSEMI	获取价格	Schottky Barrier Diode
NSVR201MXT5G	ONSEMI	获取价格	Schottky Barrier Diode
NSVR30CM3T5G	ONSEMI	获取价格	双共阴极肖特基二极管
NSVR351SDSA3	ONSEMI	获取价格	Schottky Barrier Diode
NSVR351SDSA3T1G	ONSEMI	获取价格	Schottky Barrier Diode

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