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NSR0520V2T5G PDF预览

NSR0520V2T5G

更新时间: 2024-11-20 01:19:07
品牌 Logo 应用领域
安森美 - ONSEMI 功效测试光电二极管
页数 文件大小 规格书
4页 53K
描述
Schottky Barrier Diode

NSR0520V2T5G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SOD-523, 2 PINReach Compliance Code:compliant
Factory Lead Time:4 weeks风险等级:5.36
其他特性:LOW LEAKAGE CURRENT应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.48 V
JESD-30 代码:R-PDSO-F2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:2 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.17 W
最大重复峰值反向电压:20 V最大反向电流:30 µA
最大反向恢复时间:0.012 µs反向测试电压:10 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

NSR0520V2T5G 数据手册

 浏览型号NSR0520V2T5G的Datasheet PDF文件第2页浏览型号NSR0520V2T5G的Datasheet PDF文件第3页浏览型号NSR0520V2T5G的Datasheet PDF文件第4页 
NSR0520V2, NSVR0520V2  
Schottky Barrier Diode  
Schottky barrier diodes are optimized for very low forward voltage  
drop and low leakage current and are used in a wide range of dc−dc  
converter, clamping and protection applications in portable devices.  
NSR0520V2 in a SOD−523 miniature package enables designers to  
meet the challenging task of achieving higher efficiency and meeting  
reduced space requirements.  
http://onsemi.com  
20 VOLT SCHOTTKY  
BARRIER DIODE  
Features  
Very Low Forward Voltage Drop − 325 mV @ 100 mA  
Low Reverse Current − 8.0 mA @ 10 V  
Continuous Forward Current − 500 mA  
Power Dissipation with Minimum Trace − 170 mW  
Very High Switching Speed − 12 ns @ 10 mA  
Low Capacitance − 35 pF @ 1.0 V  
1
2
CATHODE  
ANODE  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
2
1
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
SOD−523  
CASE 502  
STYLE 1  
Compliant  
Typical Applications  
LCD and Keypad Backlighting  
Camera Photo Flash  
MARKING DIAGRAM  
Buck and Boost dc−dc Converters  
Reverse Voltage and Current Protection  
Clamping and Protection  
AA MG  
G
1
2
AA = Device Code  
Markets  
M
= Date Code*  
Mobile Handsets  
MP3 Players  
Digital Camera and Camcorders  
Notebook PCs & PDAs  
GPS  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation position may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
MAXIMUM RATINGS  
Device  
Package  
Shipping  
Rating  
Symbol Value  
Unit  
Vdc  
mA  
A
NSR0520V2T1G  
SOD−523 3000/Tape & Reel  
(Pb−Free)  
Reverse Voltage  
V
20  
500  
2.0  
1.5  
R
Forward Continuous Current (DC)  
I
F
NSVR0520V2T1G SOD−523 3000/Tape & Reel  
(Pb−Free)  
Non−Repetitive Peak Forward Surge Current  
I
FSM  
FRM  
Repetitive Peak Forward Current  
(Pulse Wave = 1 sec, Duty Cycle = 66%)  
I
A
NSR0520V2T5G  
SOD−523 8000/Tape & Reel  
(Pb−Free)  
ESD Rating: Human Body Model  
Machine Model  
ESD  
Class 3B  
Class C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
October, 2014 − Rev. 4  
NSR0520V2T1/D  

NSR0520V2T5G 替代型号

型号 品牌 替代类型 描述 数据表
NSVR0520V2T1G ONSEMI

完全替代

肖特基势垒整流器,500 mA,20 V
NSR0520V2T1G ONSEMI

完全替代

Schottky Barrier Diode

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