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NSVR0340P2T5G PDF预览

NSVR0340P2T5G

更新时间: 2023-06-19 14:31:36
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管
页数 文件大小 规格书
4页 107K
描述
肖特基势垒整流器,200 mA,40 V

NSVR0340P2T5G 数据手册

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NSR0340P2T5G  
Schottky Barrier Diode  
Schottky barrier diodes are optimized for very low forward voltage  
drop and low leakage current and are used in a wide range of dcdc  
converter, clamping and protection applications in portable devices.  
NSR0340P2 in a SOD923 miniature package enables designers to  
meet the challenging task of achieving higher efficiency and meeting  
reduced space requirements.  
http://onsemi.com  
Features  
40 V SCHOTTKY  
BARRIER DIODE  
Very Low Forward Voltage Drop 420 mV @ 100 mA  
Low Reverse Current 0.6 mA @ 10 V  
Continuous Forward Current 200 mA  
Power Dissipation with Minimum Trace 190 mW  
Very High Switching Speed 3.0 ns @ 10 mA  
Low Capacitance 4 pF @ 5.0 V  
1
CATHODE  
2
ANODE  
This is a PbFree Device  
MARKING  
DIAGRAM  
Typical Applications  
2
LCD and Keypad Backlighting  
Camera Photo Flash  
Buck and Boost dcdc Converters  
Reverse Voltage and Current Protection  
Clamping & Protection  
1
MG  
SOD923  
CASE 514AB  
PLASTIC  
G
1
2
R
M
G
= Specific Device Code  
= Month Code  
Markets  
= PbFree Package  
Mobile Handsets  
MP3 Players  
(Note: Microdot may be in either location)  
Digital Camera and Camcorders  
Notebook PCs & PDAs  
GPS  
ORDERING INFORMATION  
Device  
Package  
Shipping†  
NSR0340P2T5G SOD923  
2 mm Pitch  
MAXIMUM RATINGS  
(PbFree) 8000 / Tape & Reel  
Rating  
Reverse Voltage  
Symbol  
Value  
40  
Unit  
V
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
V
I
R
Forward Current (DC)  
200  
1.0  
mA  
A
F
NonRepetitive Peak Forward Surge  
I
FSM  
Current  
ESD Rating: Human Body Model  
Machine Model  
ESD  
Class 2  
Class A  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2008 Rev. 0  
NSR0340P2/D  

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