5秒后页面跳转
捷配首页

Datasheet > NSVMUN5312DW1T3G
NSVMUN5312DW1T3G PDF预览

NSVMUN5312DW1T3G

更新时间： 2024-02-01 20:38:49
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
10页 105K
描述
Complementary Bias Resistor Transistors

阅读下载

中文翻译

获取价格

NSVMUN5312DW1T3G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G6Reach Compliance Code：compliant
风险等级：5.71其他特性：BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：60
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN AND PNP
最大功率耗散 (Abs)：0.385 W参考标准：AEC-Q101
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSVMUN5312DW1T3G 数据手册

 浏览型号NSVMUN5312DW1T3G的Datasheet PDF文件第2页浏览型号NSVMUN5312DW1T3G的Datasheet PDF文件第3页浏览型号NSVMUN5312DW1T3G的Datasheet PDF文件第4页浏览型号NSVMUN5312DW1T3G的Datasheet PDF文件第5页浏览型号NSVMUN5312DW1T3G的Datasheet PDF文件第6页浏览型号NSVMUN5312DW1T3G的Datasheet PDF文件第7页 
MUN5312DW1,  
NSBC124EPDXV6,  
NSBC124EPDP6  
Complementary Bias  
Resistor Transistors  
www.onsemi.com  
PIN CONNECTIONS  
(2)  
R1 = 22 kW, R2 = 22 kW  
NPN and PNP Transistors with Monolithic  
Bias Resistor Network  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base-emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
(3)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
Features  
R
1
• Simplifies Circuit Design  
• Reduces Board Space  
(4)  
(5)  
(6)  
• Reduces Component Count  
MARKING DIAGRAMS  
• S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable*  
6
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
SOT−363  
CASE 419B  
12 M G  
Compliant  
G
MAXIMUM RATINGS  
(T = 25°C both polarities Q (PNP) & Q (NPN), unless otherwise noted)  
A
1
1
2
Rating  
Symbol  
Max  
50  
Unit  
Vdc  
SOT−563  
CASE 463A  
1
12 M G  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
CBO  
CEO  
G
V
50  
Vdc  
Collector Current − Continuous  
Input Forward Voltage  
I
100  
40  
mAdc  
Vdc  
C
V
IN(fwd)  
SOT−963  
CASE 527AD  
Input Reverse Voltage  
V
10  
Vdc  
M G  
IN(rev)  
G
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1
12/R  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb-Free Package  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MUN5312DW1T1G,  
SMUN5312DW1T1G*  
SOT−363  
3,000 / Tape & Reel  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending up-  
on manufacturing location.  
NSVMUN5312DW1T3G*  
SOT−363  
SOT−363  
10,000 / Tape & Reel  
3,000 / Tape & Reel  
MUN5312DW1T2G,  
NSVMUN5312DW1T2G*  
NSBC124EPDXV6T1G  
NSBC124EPDXV6T5G  
NSBC124EPDP6T5G  
SOT−563  
SOT−563  
SOT−963  
4,000 / Tape & Reel  
8,000 / Tape & Reel  
8,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
June, 2015 − Rev. 3  
DTC124EP/D  
1234567...10

中文翻译

下载PDF

与NSVMUN5312DW1T3G相关器件

型号 品牌 获取价格 描述 数据表
NSVMUN531335DW1T1G ONSEMI

获取价格

 		Complementary Bias Resistor Transistors
NSVMUN531335DW1T3G ONSEMI

获取价格

 		Complementary Bias Resistor Transistors
NSVMUN5314DW1T3G ONSEMI

获取价格

 		互补双极数字晶体管 (BRT)
NSVMUN5331DW1T1G ONSEMI

获取价格

 		互补双极数字晶体管 (BRT)
NSVMUN5332DW1T1G ONSEMI

获取价格

 		Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
NSVMUN5332DW1T3G ONSEMI

获取价格

 		互补双极数字晶体管 (BRT)
NSVMUN5333DW1T1G ONSEMI

获取价格

 		Dual Bias Resistor Transistors
NSVMUN5333DW1T3G ONSEMI

获取价格

 		互补双极数字晶体管 (BRT)
NSVMUN5334DW1T1G ONSEMI

获取价格

 		Dual Bias Resistor Transistors
NSVMUN5336DW1T1G ONSEMI

获取价格

 		互补 NPN+PNP 双极数字晶体管 (BRT)

与NSVMUN5312DW1T3G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证