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NSVMUN5338DW1T3G PDF预览

NSVMUN5338DW1T3G

更新时间： 2024-12-02 11:13:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 214K
描述
4.7kΩ, 10kΩ Complementary Bias Resistor Transistors

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NSVMUN5338DW1T3G 数据手册

 浏览型号NSVMUN5338DW1T3G的Datasheet PDF文件第2页浏览型号NSVMUN5338DW1T3G的Datasheet PDF文件第3页浏览型号NSVMUN5338DW1T3G的Datasheet PDF文件第4页浏览型号NSVMUN5338DW1T3G的Datasheet PDF文件第5页浏览型号NSVMUN5338DW1T3G的Datasheet PDF文件第6页浏览型号NSVMUN5338DW1T3G的Datasheet PDF文件第7页 
Complementary Bias  
Resistor Transistors  
R1 = 4.7 kW, R2 = 10 kW  
R1 = 47 kW, R2 = 47 W  
NPN and PNP Transistors with Monolithic  
Bias Resistor Network  
www.onsemi.com  
PIN CONNECTIONS  
(2)  
MUN5338DW1  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base-emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
(3)  
(1)  
R
1
R
2
Q
1
Q
2
Features  
R
2
R
1
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
(4)  
(5)  
(6)  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101  
Qualified and PPAP Capable*  
MARKING DIAGRAM  
6
SOT−363  
CASE 419B  
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
Compliant  
RM MG  
G
1
MAXIMUM RATINGS  
(T = 25°C both polarities Q (PNP) & Q (NPN), unless otherwise noted)  
A
1
2
RM = Specific Device Code  
M
G
= Date Code*  
= Pb-Free Package  
Rating  
Symbol  
Max  
50  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
CBO  
V
CEO  
(Note: Microdot may be in either location)  
50  
Vdc  
*Date Code orientation may vary depending up-  
on manufacturing location.  
Collector Current − Continuous  
Input Forward Voltage  
I
100  
20  
mAdc  
Vdc  
C
V
IN(fwd)  
Input Reverse Voltage  
V
IN(rev)  
7
Vdc  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MUN5338DW1T3G,  
NSVMUN5338DW1T3G*  
SOT−363  
10,000/Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
July, 2021 − Rev. 1  
MUN5338/D  
12345678

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