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NSVP264SDSF3T1G PDF预览

NSVP264SDSF3T1G

更新时间： 2024-10-02 11:09:31
品牌 Logo 应用领域
安森美 - ONSEMI 射频二极管
页数 文件大小 规格书
5页 143K
描述
射频二极管，双串联 PIN，适用于 VHF、UHF 和 AGC

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中文翻译

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NSVP264SDSF3T1G 数据手册

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DATA SHEET  
www.onsemi.com  
50 V, 50 mA  
PIN Diode  
Dual series PIN Diode for  
VHF, UHF and AGC  
r = 2.5 W typ  
s
PIN Diode  
ELECTRICAL CONECTION  
NSVP264SDSF3  
3
This PIN diode is designed to realize compact and efficient designs.  
Two PIN diodes are incorporated in one SC−70 package. The use of  
dual PIN diodes can reduce both system cost and board space. This  
PIN diode is AEC−Q101 qualified and PPAP capable for automotive  
applications.  
1 : Anode  
2 : Cathode  
3 : Cathode / Anode  
2
1
SC−70 / MCP3  
CASE 419AJ  
MARKING  
DIAGRAM  
Features  
• Series connection of 2 elements in a small−size package  
• Small Interterminal Capacitance (C = 0.23 pF typ)  
• Small Forward Series Resistance (r = 2.5 W typ)  
• MCP3 package is pin−compatible with SC−70  
• AEC−Q101 qualified and PPAP capable  
• Pb−Free, Halogen Free and RoHS Compliance  
3
LOT No.  
s
KV  
LOT No.  
1
2
Typical Applications  
ORDERING INFORMATION  
• Auto Gain Control for Radio  
See detailed ordering and shipping information on  
page 3 of this data sheet.  
ABSOLUTE MAXIMUM RATINGS at T = 25°C  
A
Symbol  
Parameter  
Reverse Voltage  
Value  
50  
Unit  
V
V
R
I
Forward Current  
50  
mA  
mW  
°C  
F
P
Allowable Power Dissipation  
100  
T
T
Operating Junction and Storage  
Temperature  
−55 to +125  
J, stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ELECTRICAL CHARACTERISTICS at T = 25°C (Note 1)  
A
Symbol  
Parameter  
Reverse Voltage  
Conditions  
Min  
50  
−
Typ  
−
Max  
−
Unit  
V
V
R
I = 10 mA  
R
I
R
Reverse Current  
V
R
= 50 V  
−
0.1  
0.95  
0.4  
8.0  
4.5  
mA  
V
V
F
Forward Voltage  
I = 50 mA  
F
−
0.91  
0.23  
4.0  
2.5  
C
Interterminal Capacitance  
Series Resistance  
V
R
= 50 V, f = 1 MHz  
−
pF  
W
r
I = 5 mA, f = 100 MHz  
−
s
F
I = 10 mA, f = 100 MHz  
−
W
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
1. The specifications shown above are for each individual diode.  
© Semiconductor Components Industries, LLC, 2022  
1
Publication Order Number:  
June, 2022 − Rev. 0  
NSVP264SDSF3/D  
 
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