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NSVMUN531335DW1T1G

更新时间： 2024-12-02 01:15:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 81K
描述
Complementary Bias Resistor Transistors

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NSVMUN531335DW1T1G 数据手册

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MUN531335DW1  
Complementary Bias  
Resistor Transistors  
NPN - R1=47 kW, R2=47 kW  
PNP - R1=2.2 kW, R2=47 kW  
NPN and PNP Transistors with Monolithic  
Bias Resistor Network  
www.onsemi.com  
PIN CONNECTIONS  
(2)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base-emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
(3)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
Features  
R
1
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101  
Qualified and PPAP Capable  
(4)  
(5)  
(6)  
MARKING DIAGRAM  
6
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
SOT−363  
CASE 419B  
AJ MG  
Compliant  
G
1
MAXIMUM RATINGS  
(T = 25°C, common for Q (PNP), unless otherwise noted)  
A
1
AJ  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb-Free Package  
Rating  
Collector−Base Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
V
CBO  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
V
CEO  
50  
Vdc  
(Note: Microdot may be in either location)  
I
C
100  
12  
mAdc  
Vdc  
*Date Code orientation may vary depending up-  
on manufacturing location.  
V
IN(fwd)  
Input Reverse Voltage  
V
IN(rev)  
5
Vdc  
MAXIMUM RATINGS  
(T = 25°C, common for Q (NPN), unless otherwise noted)  
A
ORDERING INFORMATION  
2
Device  
Package Shipping†  
Rating  
Symbol  
Max  
50  
Unit  
Vdc  
NSVMUN531335DW1T1G SOT−363 3000 / Tape  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
CBO  
V
CEO  
(Pb−Free)  
& Reel  
50  
Vdc  
NSVMUN531335DW1T3G SOT−363  
10000 /  
Collector Current − Continuous  
Input Forward Voltage  
I
100  
40  
mAdc  
Vdc  
C
(Pb−Free) Tape & Reel  
V
IN(fwd)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Input Reverse Voltage  
V
10  
Vdc  
IN(rev)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
November, 2016 − Rev. 2  
MUN531335DW1/D  
1234567

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NSVMUN531335DW1T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSVMUN531335DW1T3G ONSEMI

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