NSVMUN5132T1G

更新时间： 2024-02-24 06:10:34

品牌	Logo	应用领域
安森美 - ONSEMI		晶体数字晶体管
页数	文件大小	规格书
12页	145K
描述
Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k

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中文翻译

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数据手册

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NSVMUN5132T1G 数据手册

MUN2132, MMUN2132L,

MUN5132, DTA143EE,

DTA143EM3, NSBA143EF3

Digital Transistors (BRT)

R1 = 4.7 kW, R2 = 4.7 kW

http://onsemi.com

PIN CONNECTIONS

PNP Transistors with Monolithic Bias

Resistor Network

PIN 3

COLLECTOR

(OUTPUT)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

MARKING DIAGRAMS

• Simplifies Circuit Design

• Reduces Board Space

SC−59

CASE 318D

STYLE 1

XX MG

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable

SOT−23

CASE 318

STYLE 6

XXX MG

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T = 25°C)

SC−70/SOT−323

CASE 419

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

XX MG

CBO

CEO

STYLE 3

Vdc

SC−75

CASE 463

STYLE 1

100

mAdc

Vdc

XX M

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

SOT−723

CASE 631AA

STYLE 1

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SOT−1123

CASE 524AA

STYLE 1

X M

XXX

Specific Device Code

Date Code*

Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Publication Order Number:

September, 2012 − Rev. 1

DTA143E/D

12 3 4 5 6 7...12

中文翻译

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与NSVMUN5132T1G相关器件

型号	品牌	获取价格	描述	数据表
NSVMUN5133DW1T1G	ONSEMI	获取价格	双 PNP 双极数字晶体管 (BRT)
NSVMUN5134T1G	ONSEMI	获取价格	PNP Bipolar Digital Transistor (BRT)
NSVMUN5135DW1T1G	ONSEMI	获取价格	双 PNP 双极数字晶体管 (BRT)
NSVMUN5137DW1T1G	ONSEMI	获取价格	Dual PNP Bipolar Digital Transistor (BRT)
NSVMUN5211DW1T2G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSVMUN5211DW1T3G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSVMUN5212DW1T1G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSVMUN5213DW1T3G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)
NSVMUN5214DW1T3G	ONSEMI	获取价格	Dual NPN Bipolar Digital Transistor (BRT)
NSVMUN5233DW1T3G	ONSEMI	获取价格	双路 PNP 双极数字晶体管 (BRT)

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