Datasheet > 晶体管 > 小信号双极晶体管> NSVMUN5234T1G

NSVMUN5234T1G

更新时间： 2023-06-19 14:32:12

品牌	Logo	应用领域
安森美 - ONSEMI		小信号双极晶体管数字晶体管
页数	文件大小	规格书
12页	100K
描述
NPN 双极数字晶体管 (BRT)

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中文翻译

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数据手册

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NSVMUN5234T1G 数据手册

MMUN2211LT1 Series

Preferred Devices

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SOT-23 package which is designed for low power surface mount

applications.

http://onsemi.com

PIN 3

COLLECTOR

(OUTPUT)

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

• Simplifies Circuit Design

• Reduces Board Space and Component Count

• Pb−Free Packages are Available

MARKING DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

A8x M G

SOT−23

CASE 318

STYLE 6

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

CBO

CEO

Vdc

A8x = Specific Device Code

100

mAdc

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

246 (Note 1)

400 (Note 2)

1.5 (Note 1)

2.0 (Note 2)

T = 25°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 11 of this data sheet.

Derate above 25°C

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Lead

508 (Note 1)

311 (Note 2)

Preferred devices are recommended choices for future use

and best overall value.

174 (Note 1)

208 (Note 2)

°C/W

°C

Junction and Storage Temperature

Range

T , T

−55 to +150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 @ minimum pad

2. FR−4 @ 1.0 x 1.0 inch pad

Publication Order Number:

August, 2005 − Rev. 7

MMUN2211LT1/D

12 3 4 5 6 7...12

中文翻译

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与NSVMUN5234T1G相关器件

型号	品牌	获取价格	描述	数据表
NSVMUN5235DW1T1G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)
NSVMUN5236T1G	ONSEMI	获取价格	NPN Bipolar Digital Transistor (BRT)
NSVMUN5237T1G	ONSEMI	获取价格	NPN 双极数字晶体管 (BRT)
NSVMUN5312DW1T2G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVMUN5312DW1T3G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVMUN531335DW1T1G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVMUN531335DW1T3G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVMUN5314DW1T3G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSVMUN5331DW1T1G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSVMUN5332DW1T1G	ONSEMI	获取价格	Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

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