Datasheet > NSVMUN5235DW1T1G

NSVMUN5235DW1T1G

更新时间： 2023-06-19 14:32:12

品牌	Logo	应用领域
安森美 - ONSEMI		数字晶体管
页数	文件大小	规格书
8页	124K
描述
双 NPN 双极数字晶体管 (BRT)

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中文翻译

获取价格

数据手册

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NSVMUN5235DW1T1G 数据手册

MUN5235DW1,

NSBC123JDXV6,

NSBC123JDP6

Dual NPN Bias Resistor

Transistors

R1 = 2.2 kW, R2 = 47 kW

http://onsemi.com

PIN CONNECTIONS

(2)

NPN Transistors with Monolithic Bias

Resistor Network

(3)

(1)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

(4)

(5)

(6)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

MARKING DIAGRAMS

SOT−363

CASE 419B

7M M G

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

(T = 25°C, common for Q and Q , unless otherwise noted)

SOT−563

CASE 463A

7M M G

Rating

Symbol

Max

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

SOT−963

CASE 527AD

M G

IN(fwd)

Input Reverse Voltage

IN(rev)

Vdc

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

7M/D

Specific Device Code

Date Code*

Pb-Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

*Date Code orientation may vary depending

upon manufacturing location.

†

Device

Package

Shipping

MUN5235DW1T1G,

SMUN5235DW1T1G

SOT−363

3,000 / Tape & Reel

SMUN5235DW1T3G

NSBC123JDXV6T1G

NSBC123JDXV6T5G

NSBC123JDP6T5G

SOT−363

SOT−563

SOT−963

10,000 / Tape & Reel

4,000 / Tape & Reel

8,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

February, 2014 − Rev. 1

DTC123JD/D

12 3 4 5 6 7 8

中文翻译

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与NSVMUN5235DW1T1G相关器件

型号	品牌	获取价格	描述	数据表
NSVMUN5236T1G	ONSEMI	获取价格	NPN Bipolar Digital Transistor (BRT)
NSVMUN5237T1G	ONSEMI	获取价格	NPN 双极数字晶体管 (BRT)
NSVMUN5312DW1T2G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVMUN5312DW1T3G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVMUN531335DW1T1G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVMUN531335DW1T3G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVMUN5314DW1T3G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSVMUN5331DW1T1G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSVMUN5332DW1T1G	ONSEMI	获取价格	Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
NSVMUN5332DW1T3G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)

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