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NSVMUN5137DW1T1G PDF预览

NSVMUN5137DW1T1G

更新时间： 2024-12-02 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管小信号双极晶体管
页数 文件大小 规格书
6页 97K
描述
Dual PNP Bipolar Digital Transistor (BRT)

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中文翻译

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NSVMUN5137DW1T1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G6Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.74
其他特性：BUILT IN BIAS RESISTOR RATIO IS 0.468最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
最大功率耗散 (Abs)：0.385 W参考标准：AEC-Q101
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
VCEsat-Max：0.25 VBase Number Matches：1

NSVMUN5137DW1T1G 数据手册

 浏览型号NSVMUN5137DW1T1G的Datasheet PDF文件第2页浏览型号NSVMUN5137DW1T1G的Datasheet PDF文件第3页浏览型号NSVMUN5137DW1T1G的Datasheet PDF文件第4页浏览型号NSVMUN5137DW1T1G的Datasheet PDF文件第5页浏览型号NSVMUN5137DW1T1G的Datasheet PDF文件第6页 
NSBA114EDP6T5G Series  
Preferred Devices  
Dual Digital Transistors  
(BRT)  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The digital transistor  
contains a single transistor with a monolithic bias network consisting  
of two resistors; a series base resistor and a base−emitter resistor. The  
digital transistor eliminates these individual components by  
integrating them into a single device. The use of a digital transistor can  
reduce both system cost and board space. The device is housed in the  
SOT−963 package which is designed for low power surface mount  
applications.  
(3)  
(2)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
Features  
• Simplifies Circuit Design  
• Reduces Board Space  
MARKING  
DIAGRAM  
• Reduces Component Count  
• The SOT−963 Package can be Soldered using Wave or Reflow.  
• Available in 4 mm, 8000 Unit Tape & Reel  
• These are Pb−Free Devices  
XM  
1
SOT−963  
CASE 527AD  
• These are Halide−Free Devices  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
X
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
CBO  
V
CEO  
50  
Vdc  
I
C
100  
mAdc  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†
Device  
NSBA114EDP6T5G  
Package  
Shipping  
SOT−963  
(Pb−Free)  
8000 /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
October, 2008 − Rev. 5  
NSBA114EDP6/D  
123456

中文翻译

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