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NSVMUN5211DW1T2G PDF预览

NSVMUN5211DW1T2G

更新时间: 2024-01-12 05:51:02
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 159K
描述
Dual NPN Bias Resistor Transistors

NSVMUN5211DW1T2G 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantFactory Lead Time:1 week
风险等级:5.7JESD-609代码:e3
湿度敏感等级:1端子面层:Tin (Sn)
Base Number Matches:1

NSVMUN5211DW1T2G 数据手册

 浏览型号NSVMUN5211DW1T2G的Datasheet PDF文件第2页浏览型号NSVMUN5211DW1T2G的Datasheet PDF文件第3页浏览型号NSVMUN5211DW1T2G的Datasheet PDF文件第4页浏览型号NSVMUN5211DW1T2G的Datasheet PDF文件第5页浏览型号NSVMUN5211DW1T2G的Datasheet PDF文件第6页浏览型号NSVMUN5211DW1T2G的Datasheet PDF文件第7页 
MUN5211DW1,  
NSBC114EDXV6,  
NSBC114EDP6  
Dual NPN Bias Resistor  
Transistors  
R1 = 10 kW, R2 = 10 kW  
NPN Transistors with Monolithic Bias  
Resistor Network  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base-emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
www.onsemi.com  
PIN CONNECTIONS  
(2)  
(3)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
Features  
R
1
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable*  
(4)  
(5)  
(6)  
MARKING DIAGRAMS  
6
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
SOT363  
CASE 419B  
7A M G  
Compliant  
G
MAXIMUM RATINGS  
A
1
(T = 25°C, common for Q and Q , unless otherwise noted)  
1
2
Rating  
Symbol  
Max  
50  
Unit  
Vdc  
SOT563  
CASE 463A  
1
7A M G  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
CBO  
CEO  
G
V
50  
Vdc  
Collector Current Continuous  
Input Forward Voltage  
I
100  
40  
mAdc  
Vdc  
C
V
IN(fwd)  
SOT963  
CASE 527AD  
M G  
Input Reverse Voltage  
V
10  
Vdc  
IN(rev)  
G
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1
7A/A  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb-Free Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
(Note: Microdot may be in either location)  
MUN5211DW1T1G,  
SMUN5211DW1T1G*  
SOT363  
3,000 / Tape & Reel  
*Date Code orientation may vary depending up-  
on manufacturing location.  
NSVMUN5211DW1T2G*  
NSVMUN5211DW1T3G*  
SOT363  
SOT363  
SOT563  
3,000 / Tape & Reel  
10,000 / Tape & Reel  
4,000 / Tape & Reel  
NSBC114EDXV6T1G,  
NSVBC114EDXV6T1G*  
NSBC114EDXV6T5G  
NSBC114EDP6T5G  
SOT563  
SOT963  
8,000 / Tape & Reel  
8,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
June, 2016 Rev. 4  
DTC114ED/D  

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