5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 小信号双极晶体管> NSVMUN5113DW1T3G
NSVMUN5113DW1T3G PDF预览

NSVMUN5113DW1T3G

更新时间： 2023-06-19 14:32:11
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管数字晶体管
页数 文件大小 规格书
20页 148K
描述
双 PNP 双极数字晶体管 (BRT)

阅读下载

中文翻译

获取价格

NSVMUN5113DW1T3G 技术参数

是否无铅：不含铅生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：8 weeks风险等级：1.6
Is Samacsys：N最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：80JESD-609代码：e3
湿度敏感等级：1元件数量：2
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.385 W子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

NSVMUN5113DW1T3G 数据手册

 浏览型号NSVMUN5113DW1T3G的Datasheet PDF文件第2页浏览型号NSVMUN5113DW1T3G的Datasheet PDF文件第3页浏览型号NSVMUN5113DW1T3G的Datasheet PDF文件第4页浏览型号NSVMUN5113DW1T3G的Datasheet PDF文件第5页浏览型号NSVMUN5113DW1T3G的Datasheet PDF文件第6页浏览型号NSVMUN5113DW1T3G的Datasheet PDF文件第7页 
MUN5111DW1T1 Series  
Preferred Devices  
Dual Bias Resistor  
Transistors  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with a  
monolithic bias network consisting of two resistors; a series base resistor  
and a base−emitter resistor. These digital transistors are designed to  
replace a single device and its external resistor bias network. The BRT  
eliminates these individual components by integrating them into a single  
device. In the MUN5111DW1T1 series, two BRT devices are housed in  
the SOT−363 package which is ideal for low−power surface mount  
applications where board space is at a premium.  
(3)  
(2)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
R
1
Features  
(4)  
(5)  
(6)  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Pb−Free Packages are Available  
1
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
1
2
SOT−363  
CASE 419B  
STYLE 1  
Rating  
Symbol  
Value  
−50  
−50  
−100  
Unit  
Vdc  
Collector-Base Voltage  
V
CBO  
Collector-Emitter Voltage  
Collector Current  
V
Vdc  
CEO  
I
mAdc  
C
THERMAL CHARACTERISTICS  
MARKING DIAGRAM  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
6
Total Device Dissipation  
T = 25°C  
A
P
187 (Note 1)  
256 (Note 2)  
mW  
D
xx M G  
1.5 (Note 1) mW/°C  
2.0 (Note 2)  
Derate above 25°C  
G
1
Thermal Resistance,  
Junction-to-Ambient  
R
q
JA  
670 (Note 1) °C/W  
490 (Note 2)  
Characteristic  
(Both Junctions Heated)  
xx = Device Code (Refer to page 2)  
Symbol  
Max  
Unit  
M
= Date Code  
Total Device Dissipation  
P
250 (Note 1)  
385 (Note 2)  
2.0 (Note 1) mW/°C  
3.0 (Note 2)  
mW  
D
G
= Pb−Free Package  
T = 25°C  
A
(Note: Microdot may be in either location)  
Derate above 25°C  
ORDERING INFORMATION  
See detailed ordering and shipping information in the table on  
page 2 of this data sheet.  
Thermal Resistance,  
Junction-to-Ambient  
R
q
JA  
493 (Note 1) °C/W  
325 (Note 2)  
Thermal Resistance,  
Junction-to-Lead  
R
q
JL  
188 (Note 1) °C/W  
208 (Note 2)  
DEVICE MARKING INFORMATION  
Junction and Storage Temperature Range T , T  
−55 to +150  
°C  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. FR−4 @ Minimum Pad  
2. FR−4 @ 1.0 x 1.0 inch Pad  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 6  
MUN5111DW1T1/D  
 
1234567...20

中文翻译

下载PDF

与NSVMUN5113DW1T3G相关器件

型号 品牌 获取价格 描述 数据表
NSVMUN5131T1G ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
NSVMUN5132T1G ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k
NSVMUN5133DW1T1G ONSEMI

获取价格

 		双 PNP 双极数字晶体管 (BRT)
NSVMUN5134T1G ONSEMI

获取价格

 		PNP Bipolar Digital Transistor (BRT)
NSVMUN5135DW1T1G ONSEMI

获取价格

 		双 PNP 双极数字晶体管 (BRT)
NSVMUN5137DW1T1G ONSEMI

获取价格

 		Dual PNP Bipolar Digital Transistor (BRT)
NSVMUN5211DW1T2G ONSEMI

获取价格

 		Dual NPN Bias Resistor Transistors
NSVMUN5211DW1T3G ONSEMI

获取价格

 		Dual NPN Bias Resistor Transistors
NSVMUN5212DW1T1G ONSEMI

获取价格

 		Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSVMUN5213DW1T3G ONSEMI

获取价格

 		双 NPN 双极数字晶体管 (BRT)

与NSVMUN5113DW1T3G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证