5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 小信号双极晶体管> NSVMUN5131T1G
NSVMUN5131T1G PDF预览

NSVMUN5131T1G

更新时间： 2024-02-01 00:36:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管数字晶体管开关光电二极管PC
页数 文件大小 规格书
10页 133K
描述
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

阅读下载

中文翻译

获取价格

NSVMUN5131T1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：4 weeks风险等级：5.67
Samacsys Confidence：4Samacsys Status：Released
Samacsys PartID：1224413Samacsys Pin Count：3
Samacsys Part Category：Transistor RET PNPSamacsys Package Category：SOT23 (3-Pin)
Samacsys Footprint Name：SOT-23 (TO-236) CASE 318-08 ISSUE AR_2Samacsys Released Date：2018-05-10 07:54:03
Is Samacsys：N其他特性：BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：8
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP最大功率耗散 (Abs)：0.31 W
参考标准：AEC-Q101子类别：BIP General Purpose Small Signals
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSVMUN5131T1G 数据手册

 浏览型号NSVMUN5131T1G的Datasheet PDF文件第2页浏览型号NSVMUN5131T1G的Datasheet PDF文件第3页浏览型号NSVMUN5131T1G的Datasheet PDF文件第4页浏览型号NSVMUN5131T1G的Datasheet PDF文件第5页浏览型号NSVMUN5131T1G的Datasheet PDF文件第6页浏览型号NSVMUN5131T1G的Datasheet PDF文件第7页 
MUN2131, MMUN2131L,  
MUN5131, DTA123EE,  
DTA123EM3  
Digital Transistors (BRT)  
R1 = 2.2 kW, R2 = 2.2 kW  
http://onsemi.com  
PIN CONNECTIONS  
PNP Transistors with Monolithic Bias  
Resistor Network  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base−  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
• Simplifies Circuit Design  
• Reduces Board Space  
SC−59  
CASE 318D  
STYLE 1  
XX MG  
• Reduces Component Count  
G
• S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable  
1
SOT−23  
CASE 318  
STYLE 6  
XXX MG  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
G
Compliant  
1
MAXIMUM RATINGS (T = 25°C)  
A
SC−70/SOT−323  
CASE 419  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
XX MG  
G
V
V
CBO  
CEO  
STYLE 3  
1
50  
Vdc  
SC−75  
CASE 463  
STYLE 1  
I
C
100  
12  
mAdc  
Vdc  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
10  
Vdc  
IN(rev)  
SOT−723  
CASE 631AA  
STYLE 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 1  
DTA123E/D  
1234567...10

中文翻译

下载PDF

与NSVMUN5131T1G相关器件

型号 品牌 获取价格 描述 数据表
NSVMUN5132T1G ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k
NSVMUN5133DW1T1G ONSEMI

获取价格

 		双 PNP 双极数字晶体管 (BRT)
NSVMUN5134T1G ONSEMI

获取价格

 		PNP Bipolar Digital Transistor (BRT)
NSVMUN5135DW1T1G ONSEMI

获取价格

 		双 PNP 双极数字晶体管 (BRT)
NSVMUN5137DW1T1G ONSEMI

获取价格

 		Dual PNP Bipolar Digital Transistor (BRT)
NSVMUN5211DW1T2G ONSEMI

获取价格

 		Dual NPN Bias Resistor Transistors
NSVMUN5211DW1T3G ONSEMI

获取价格

 		Dual NPN Bias Resistor Transistors
NSVMUN5212DW1T1G ONSEMI

获取价格

 		Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSVMUN5213DW1T3G ONSEMI

获取价格

 		双 NPN 双极数字晶体管 (BRT)
NSVMUN5214DW1T3G ONSEMI

获取价格

 		Dual NPN Bipolar Digital Transistor (BRT)

与NSVMUN5131T1G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证