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NSVMUN2212T1G PDF预览

NSVMUN2212T1G

更新时间： 2024-01-29 17:50:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
12页 140K
描述
Digital Transistors (BRT) R1 = 22 k, R2 = 22 k

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中文翻译

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NSVMUN2212T1G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：SC-59包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：1.51Is Samacsys：N
其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：60JESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：0.338 W
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSVMUN2212T1G 数据手册

 浏览型号NSVMUN2212T1G的Datasheet PDF文件第2页浏览型号NSVMUN2212T1G的Datasheet PDF文件第3页浏览型号NSVMUN2212T1G的Datasheet PDF文件第4页浏览型号NSVMUN2212T1G的Datasheet PDF文件第5页浏览型号NSVMUN2212T1G的Datasheet PDF文件第6页浏览型号NSVMUN2212T1G的Datasheet PDF文件第7页 
MUN2212, MMUN2212L,  
MUN5212, DTC124EE,  
DTC124EM3, NSBC124EF3  
Digital Transistors (BRT)  
R1 = 22 kW, R2 = 22 kW  
http://onsemi.com  
PIN CONNECTIONS  
NPN Transistors with Monolithic Bias  
Resistor Network  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base−  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
• Simplifies Circuit Design  
• Reduces Board Space  
SC−59  
CASE 318D  
STYLE 1  
XX MG  
• Reduces Component Count  
G
• S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101  
Qualified and PPAP Capable  
1
SOT−23  
CASE 318  
STYLE 6  
XXX MG  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
G
Compliant  
1
MAXIMUM RATINGS (T = 25°C)  
A
SC−70/SOT−323  
CASE 419  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
XX MG  
G
V
V
CBO  
CEO  
STYLE 3  
1
50  
Vdc  
SC−75  
CASE 463  
STYLE 1  
I
C
100  
40  
mAdc  
Vdc  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
10  
Vdc  
IN(rev)  
SOT−723  
CASE 631AA  
STYLE 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
SOT−1123  
CASE 524AA  
STYLE 1  
X M  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 − Rev. 0  
DTC124E/D  
1234567...12

中文翻译

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