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NSVMUN2236T1G PDF预览

NSVMUN2236T1G

更新时间： 2023-06-19 14:32:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 125K
描述
NPN Bipolar Digital Transistor (BRT)

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中文翻译

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NSVMUN2236T1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：,Reach Compliance Code：compliant
Factory Lead Time：8 weeks风险等级：5.75
JESD-609代码：e3湿度敏感等级：1
峰值回流温度（摄氏度）：NOT SPECIFIED端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NSVMUN2236T1G 数据手册

 浏览型号NSVMUN2236T1G的Datasheet PDF文件第2页浏览型号NSVMUN2236T1G的Datasheet PDF文件第3页浏览型号NSVMUN2236T1G的Datasheet PDF文件第4页浏览型号NSVMUN2236T1G的Datasheet PDF文件第5页浏览型号NSVMUN2236T1G的Datasheet PDF文件第6页浏览型号NSVMUN2236T1G的Datasheet PDF文件第7页 
MUN2236, MMUN2236L,  
MUN5236, DTC115EE,  
DTC115EM3  
Digital Transistors (BRT)  
R1 = 100 kW, R2 = 100 kW  
www.onsemi.com  
NPN Transistors with Monolithic Bias  
Resistor Network  
PIN CONNECTIONS  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base−  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable  
SC−59  
CASE 318D  
STYLE 1  
XX MG  
G
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
SOT−23  
CASE 318  
STYLE 6  
XXX MG  
Compliant  
G
MAXIMUM RATINGS (T = 25°C)  
1
A
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
SC−70/SOT−323  
CASE 419  
XX MG  
V
CBO  
G
STYLE 3  
V
CEO  
50  
Vdc  
1
I
C
100  
40  
mAdc  
Vdc  
SC−75  
CASE 463  
STYLE 1  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
IN(rev)  
10  
Vdc  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
SOT−723  
CASE 631AA  
STYLE 1  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending up-  
on manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
November, 2016 − Rev. 3  
DTC115E/D  
1234567...10

中文翻译

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