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NSVMSB1218A-RT1G PDF预览

NSVMSB1218A-RT1G

更新时间： 2023-06-19 14:32:04
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
4页 113K
描述
PNP Bipolar Transistor

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中文翻译

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NSVMSB1218A-RT1G 技术参数

是否无铅：不含铅生命周期：Active
Reach Compliance Code：compliantFactory Lead Time：12 weeks
风险等级：5.73Is Samacsys：N
Base Number Matches：1

NSVMSB1218A-RT1G 数据手册

 浏览型号NSVMSB1218A-RT1G的Datasheet PDF文件第2页浏览型号NSVMSB1218A-RT1G的Datasheet PDF文件第3页浏览型号NSVMSB1218A-RT1G的Datasheet PDF文件第4页 
MSB1218A--RT1G  
PNP Silicon General  
Purpose Amplifier  
Transistor  
This PNP Silicon Epitaxial Planar Transistor is designed for general  
purpose amplifier applications. This device is housed in the  
SC--70/SOT--323 package which is designed for low power surface  
mount applications.  
http://onsemi.com  
COLLECTOR  
3
Features  
High hFE, 210--460  
Low VCE(sat), < 0.5 V  
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS  
Compliant  
MAXIMUM RATINGS (T = 25C)  
A
1
2
BASE  
EMITTER  
Rating  
Collector--Base Voltage  
Collector--Emitter Voltage  
Emitter--Base Voltage  
Symbol  
Value  
45  
Unit  
Vdc  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
3
V
V
45  
Vdc  
1
7.0  
Vdc  
2
Collector Current -- Continuous  
Collector Current -- Peak  
THERMAL CHARACTERISTICS  
Rating  
I
100  
200  
mAdc  
mAdc  
C
I
C(P)  
SC--70 (SOT--323)  
CASE 419  
STYLE 4  
Symbol  
Max  
150  
Unit  
mW  
C  
Power Dissipation (Note 1)  
Junction Temperature  
P
D
MARKING DIAGRAM  
T
J
150  
Storage Temperature Range  
T
stg  
--55 to +150  
C  
ELECTRICAL CHARACTERISTICS  
Characteristic  
BR M G  
G
Symbol  
Min Max  
Unit  
1
Collector--Emitter Breakdown Voltage  
V
45  
45  
7.0  
--  
--  
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = 2.0 mAdc, I = 0)  
C
B
Collector--Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
V
--  
Vdc  
Vdc  
mA  
BR = Device Code  
C
E
M
G
= Date Code*  
= Pb--Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
Emitter--Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
--  
E
E
Collector--Base Cutoff Current  
(V = 20 Vdc, I = 0)  
I
I
0.1  
100  
340  
0.5  
CBO  
CEO  
CB  
E
Collector--Emitter Cutoff Current  
(V = 10 Vdc, I = 0)  
--  
mA  
ORDERING INFORMATION  
CE  
B
†
Device  
Package  
Shipping  
DC Current Gain (Note 2)  
(V = 10 Vdc, I = 2.0 mAdc)  
h
210  
--  
--  
FE1  
MSB1218A--RT1G  
SC--70  
(Pb--Free)  
3000 /Tape & Reel  
CE  
C
Collector--Emitter Saturation Voltage  
(Note 2) (I = 100 mAdc, I = 10 mAdc)  
V
Vdc  
CE(sat)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
C
B
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Device mounted on a FR--4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.  
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2010 -- Rev. 7  
MSB1218A--RT1/D  
1234

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