Datasheet > 晶体管 > 小信号双极晶体管> NSVMMUN2233LT3G

NSVMMUN2233LT3G

更新时间： 2024-12-01 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		小信号双极晶体管数字晶体管
页数	文件大小	规格书
10页	106K
描述
NPN 双极数字晶体管 (BRT)

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中文翻译

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NSVMMUN2233LT3G 数据手册

DTC114EET1 Series

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base−emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SC−75/SOT−416 package which is designed for low power surface

mount applications.

http://onsemi.com

NPN SILICON

BIAS RESISTOR TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

Features

PIN 1

• Simplifies Circuit Design

• Reduces Board Space

BASE

(INPUT)

• Reduces Component Count

PIN 2

• The SC−75/SOT−416 Package Can be Soldered Using Wave or

Reflow

EMITTER

(GROUND)

• The Modified Gull−Winged Leads Absorb Thermal Stress During

Soldering Eliminating the Possibility of Damage to the Die

• Available in 8 mm, 7 inch/3000 Unit Tape & Reel

MARKING

DIAGRAM

• Pb−Free Packages are Available

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

SC−75/SOT−416

CASE 463

STYLE 1

Rating

Collector-Base Voltage

Symbol

Value

Unit

Vdc

CBO

CEO

Collector-Emitter Voltage

Collector Current

Vdc

100

mAdc

xx = Specific Device Code

M = Date Code

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

THERMAL CHARACTERISTICS

the package dimensions section on page 2 of this data sheet.

Rating

Symbol

Value

Unit

Total Device Dissipation,

FR−4 Board (Note 1) @ T = 25°C

Derate above 25°C

200

1.6

mW/°C

Thermal Resistance,

600

°C/W

Junction−to−Ambient (Note 1)

Total Device Dissipation,

FR−4 Board (Note 2) @ T = 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient (Note 2)

400

°C/W

°C

Junction and Storage Temperature Range

T , T

−55 to

+150

stg

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 × 1.0 Inch Pad

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

January, 2005 − Rev. 6

DTC114EET1/D

12 3 4 5 6 7...10

中文翻译

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