Datasheet > 晶体管 > 小信号双极晶体管> NSVMMUN2232LT3G

NSVMMUN2232LT3G

更新时间： 2024-12-01 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		小信号双极晶体管数字晶体管
页数	文件大小	规格书
10页	82K
描述
NPN 双极数字晶体管 (BRT)

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NSVMMUN2232LT3G 技术参数

是否无铅：	不含铅	生命周期：	Active
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	4 weeks
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	15	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.4 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
端子面层：	Tin (Sn)	晶体管元件材料：	SILICON

NSVMMUN2232LT3G 数据手册

DTC114EM3T5G Series

Digital Transistors (BRT)

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The digital transistor

contains a single transistor with a monolithic bias network consisting

of two resistors; a series base resistor and a base−emitter resistor. The

digital transistor eliminates these individual components by

integrating them into a single device. The use of a digital transistor can

reduce both system cost and board space. The device is housed in the

SOT−723 package which is designed for low power surface mount

applications.

http://onsemi.com

NPN SILICON DIGITAL

TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

Features

PIN 1

BASE

(INPUT)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

PIN 2

EMITTER

(GROUND)

• The SOT−723 Package can be Soldered using Wave or Reflow.

• Available in 4 mm, 8000 Unit Tape & Reel

• These are Pb−Free Devices

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

SOT−723

CASE 631AA

STYLE 1

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

CBO

CEO

Vdc

100

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MARKING DIAGRAM

xx = Specific Device Code

(See Marking Table on page 2)

M = Date Code

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 3

DTC114EM3/D

12 3 4 5 6 7...10

中文翻译

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与NSVMMUN2232LT3G相关器件

型号	品牌	获取价格	描述	数据表
NSVMMUN2233LT3G	ONSEMI	获取价格	NPN 双极数字晶体管 (BRT)
NSVMMUN2235LT1G	ONSEMI	获取价格	NPN Bipolar Digital Transistor (BRT)
NSVMMUN2236LT1G	ONSEMI	获取价格	NPN Bipolar Digital Transistor (BRT)
NSVMMUN2237LT1G	ONSEMI	获取价格	NPN 双极数字晶体管 (BRT)
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NSVMSB1218A-RT1G	ONSEMI	获取价格	PNP Bipolar Transistor
NSVMSB92T1G	ONSEMI	获取价格	高电压 PNP 双极晶体管
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NSVMSD42WT1G	ONSEMI	获取价格	High Voltage NPN Bipolar Transistor
NSVMSD601-RT1G	ONSEMI	获取价格	NPN 双极晶体管

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