MMUN2217L,
NSVMMUN2217L
Digital Transistors (BRT)
R1 = 4.7 kW, R2 = 10 kW
NPN Transistors with Monolithic Bias
Resistor Network
www.onsemi.com
PIN CONNECTIONS
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MARKING DIAGRAM
SOT−23
CASE 318
STYLE 6
AAM MG
G
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
AAM
M
Specific Device Code
=
Date Code*
G
=
Pb−Free Package
MAXIMUM RATINGS (T = 25°C)
A
(Note: Microdot may be in either location)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Symbol
Max
50
Unit
Vdc
*Date Code orientation may vary depending up-
on manufacturing location.
V
CBO
CEO
V
50
Vdc
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
I
C
100
20
mAdc
Vdc
V
IN(fwd)
Input Reverse Voltage
V
IN(rev)
7
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2016 − Rev. 3
DTC143X/D