Datasheet > NGTB40N135IHRWG

NGTB40N135IHRWG

更新时间： 2024-11-06 11:12:23

品牌	Logo	应用领域
安森美 - ONSEMI		栅双极性晶体管
页数	文件大小	规格书
11页	248K
描述
IGBT 1350V 40A FS2-RC 电感加热

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技术参数
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NGTB40N135IHRWG 技术参数

是否无铅：	不含铅	生命周期：	Active
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	4 weeks
风险等级：	2.02	最大集电极电流 (IC)：	80 A
集电极-发射极最大电压：	1350 V	门极发射器阈值电压最大值：	6.5 V
门极-发射极最大电压：	20 V	JESD-609代码：	e3
最高工作温度：	175 °C	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	394 W
子类别：	Insulated Gate BIP Transistors	表面贴装：	NO
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

NGTB40N135IHRWG 数据手册

NGTB40N135IHRWG

IGBT with Monolithic Free

Wheeling Diode

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Field Stop (FS) Trench construction, and provides

superior performance in demanding switching applications, offering

both low on−state voltage and minimal switching loss. The IGBT is

well suited for resonant or soft switching applications.

http://onsemi.com

40 A, 1350 V

Features

_CEsat= 2.40 V

• Extremely Efficient Trench with Fieldstop Technology

• 1350 V Breakdown Voltage

E_off= 1.30 mJ

• Optimized for Low Losses in IH Cooker Application

• Reliable and Cost Effective Single Die Solution

• These are Pb−Free Devices

Typical Applications

• Inductive Heating

• Consumer Appliances

• Soft Switching

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

V_CES

I_C

Value

Unit

Collector−emitter voltage

1350

Collector current

@ TC = 25°C

@ TC = 100°C

TO−247

CASE 340AL

Pulsed collector current, T

I_CM

120

pulse

limited by T

, 10 ms Pulse,

Jmax

= 15 V

Diode forward current

@ TC = 25°C

I_F

MARKING DIAGRAM

@ TC = 100°C

Diode pulsed current, T

limited

I_FM

120

pulse

by T

, 10 ms Pulse, V = 0 V

Jmax

Gate−emitter voltage

V_GE

$20

Transient Gate−emitter Voltage

40N135IHR

AYWWG

pulse

= 5 ms, D < 0.10)

Power Dissipation

P_D

@ TC = 25°C

394

197

@ TC = 100°C

Operating junction temperature

range

−40 to +175

°C

Storage temperature range

−55 to +175

°C

stg

= Assembly Location

= Year

= Work Week

Lead temperature for soldering, 1/8”

from case for 5 seconds

SLD

260

= Pb−Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

Device

Package

Shipping

30 Units / Rail

NGTB40N135IHRWG TO−247

(Pb−Free)

Publication Order Number:

January, 2014 − Rev. 1

NGTB40N135IHR/D

12 3 4 5 6 7...11

中文翻译

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