Datasheet > MRF21030S

MRF21030S

更新时间： 2024-09-14 04:33:23

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
5页	151K
描述
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 465F-03, 3 PIN

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中文翻译

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MRF21030S 数据手册

M O T OR O LA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

MR F 2103 0

MR F 2103 0R 3

MR F 2103 0S

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN–PCS/cellular radio and WLL

applications.

•

Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts

Output Power — 3.5 Watts

Power Gain — 14 dB

2.2 GHz, 30 W, 28 V

LATERAL N–CHANNEL

RF POWER MOSFETs

Efficiency — 15%

•

High Gain, High Efficiency and High Linearity

Integrated ESD Protection

Designed for Maximum Gain and Insertion Phase Flatness

Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW

Output Power

•

Excellent Thermal Stability

Characterized with Series Equivalent Large–Signal Impedance Parameters

Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch

Reel.

CASE 465E–03, STYLE 1

(NI–400)

(MRF21030)

CASE 465F–03, STYLE 1

(NI–400S)

(MRF21030S)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

+15, –0.5

Total Device Dissipation @ T = 25°C

Derate above 25°C

83.3

0.48

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +200

200

°C

stg

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

2.1

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 5

MRF21030 MRF21030R3 MRF21030S MRF21030SR3

5.2–290

MOTOROLA WIRELESS

RF PRODUCT DEVICE DATA

12 3 4 5

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与MRF21030S相关器件

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MRF21030SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS
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MRF21045LR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21045LR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21045LR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF21045LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21045LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21045R3	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400, CASE 465E-04, 2 PIN
MRF21045R3	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR