Datasheet > MRF21060LR3

MRF21060LR3

更新时间： 2024-11-05 05:50:11

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RF Power Field Effect Transistors

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MRF21060LR3 数据手册

Document Number: MRF21060

Rev. 9, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and

multicarrier amplifier applications.

MRF21060LR3

MRF21060LSR3

• Typical 2-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 500 mA,

_out= 6 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84

MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 12.5 dB

2110-2170 MHz, 60 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Drain Efficiency — 15%

ACPR @ 5 MHz Offset — -47 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

CASE 465-06, STYLE 1

NI-780

MRF21060LR3

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF21060LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

180

0.98

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.02

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

MRF21060LR3 MRF21060LSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7 8

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与MRF21060LR3相关器件

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MRF21060LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
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MRF21060R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
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