Datasheet > MRF21125

MRF21125

更新时间： 2024-11-06 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	428K
描述
RF Power Field Effect Transistors

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MRF21125 数据手册

Document Number: MRF21125

Rev. 9, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF21125R3

MRF21125SR3

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Typical 2-Carrier W-CDMA Performance for V_DD= 28 Volts, I_DQ

1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz, Channel bandwidth =

2110-2170 MHz, 125 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

3.84 MHz, adjacent channels at 5 MHz , ACPR and IM3 measured in

3.84 MHz bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.

Output Power — 20 Watts

Efficiency — 18%

Gain — 13 dB

IM3 — -43 dBc

ACPR — -45 dBc

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

CASE 465B-03, STYLE 1

NI-880

MRF21125R3

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF21125SR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

330

1.89

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.53

°C/W

MRF21125R3 MRF21125SR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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与MRF21125相关器件

型号	品牌	获取价格	描述	数据表
MRF21125R3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21125S	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF21125SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF21125SR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21180	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF21180	MOTOROLA	获取价格	RF Power Field Effect Transistor
MRF21180R6	MOTOROLA	获取价格	RF Power Field Effect Transistor
MRF21180R6	FREESCALE	获取价格	RF Power Field Effect Transistor
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MRF21180S	MOTOROLA	获取价格	暂无描述