Datasheet > MRF21125SR3

MRF21125SR3

更新时间： 2024-09-16 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器
页数	文件大小	规格书
12页	428K
描述
RF Power Field Effect Transistors

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MRF21125SR3 数据手册

Document Number: MRF21125

Rev. 9, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF21125R3

MRF21125SR3

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Typical 2-Carrier W-CDMA Performance for V_DD= 28 Volts, I_DQ

1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz, Channel bandwidth =

2110-2170 MHz, 125 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

3.84 MHz, adjacent channels at 5 MHz , ACPR and IM3 measured in

3.84 MHz bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.

Output Power — 20 Watts

Efficiency — 18%

Gain — 13 dB

IM3 — -43 dBc

ACPR — -45 dBc

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

CASE 465B-03, STYLE 1

NI-880

MRF21125R3

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF21125SR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

330

1.89

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.53

°C/W

MRF21125R3 MRF21125SR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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