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MRF247 PDF预览

MRF247

更新时间: 2024-09-15 22:45:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
4页 155K
描述
RF POWER TRANSISTOR NPN SILICON

MRF247 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-CXFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.62
外壳连接:EMITTER最大集电极电流 (IC):20 A
基于收集器的最大容量:300 pF集电极-发射极最大电压:18 V
配置:SINGLE最小直流电流增益 (hFE):10
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CXFM-F4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:250 W
最大功率耗散 (Abs):250 W最小功率增益 (Gp):7 dB
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:UNSPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF247 数据手册

 浏览型号MRF247的Datasheet PDF文件第2页浏览型号MRF247的Datasheet PDF文件第3页浏览型号MRF247的Datasheet PDF文件第4页 
Order this document  
by MRF247/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications  
in industrial and commercial FM equipment operating to 175 MHz.  
Specified 12.5 Volt, 175 MHz Characteristics —  
Output Power = 75 Watts  
75 W, 175 MHz  
CONTROLLED Q  
RF POWER  
Power Gain = 7.0 dB Min  
Efficiency = 55% Min  
TRANSISTOR  
NPN SILICON  
Characterized With Series Equivalent Large–Signal Impedance Parameters  
Internal Matching Network Optimized for Minimum Gain Frequency Slope  
Response Over the Range 136 to 175 MHz  
Load Mismatch Capability at Rated P  
and Supply Voltage  
out  
CASE 316–01, STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
18  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
36  
4.0  
20  
Collector Current — Peak  
I
C
Total Device Dissipation @ T = 25°C (1)  
Derate above 25°C  
P
D
250  
1.43  
Watts  
W/°C  
C
Storage Temperature Range  
THERMAL CHARACTERISTICS  
T
stg  
65 to +150  
°C  
Characteristic  
Thermal Resistance, Junction to Case (2)  
Symbol  
Max  
Unit  
R
0.7  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 100 mAdc, I = 0)  
V
18  
36  
Vdc  
Vdc  
Vdc  
(BR)CEO  
C
B
Collector–Emitter Breakdown Voltage  
(I = 50 mAdc, V = 0)  
V
V
(BR)CES  
C
BE  
Emitter–Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
4.0  
(BR)EBO  
E
C
(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.  
(2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.  
REV 1  
Motorola, Inc. 1997  

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