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BLY91C

更新时间: 2024-11-20 22:10:07
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 21K
描述
NPN SILICON RF POWER TRANSISTOR

BLY91C 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.07最大集电极电流 (IC):1 A
基于收集器的最大容量:15 pF集电极-发射极最大电压:35 V
配置:Single最小直流电流增益 (hFE):10
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):20 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BLY91C 数据手册

  
BLY91C  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI BLY91C is Designed for  
28 V Large Signal Class A,B and C  
Amplifier Applications up to 175 MHz.  
FEATURES INCLUDE:  
PACKAGE STYLE .380" 4L STUD  
Emitter Ballasting  
Gold Metalization  
3/8" SOE Stud Package  
MAXIMUM RATINGS  
1.0 A  
35 V  
IC  
VCE  
VCB  
PDISS  
TJ  
65 V  
20 W @ TC = 25 °C  
-65 °C to + 200 °C  
-65 °C to + 150 °C  
8.7 °C/W  
TSTG  
θJC  
1 = COLLECTOR  
2 & 4 = EMITTER  
3 = BASE  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
BVCES  
IC = 200 mA  
IC = 10 mA  
IE = 1.0 mA  
65  
V
BVCEO  
BVEBO  
ICES  
35  
V
4.0  
V
V
CE = 36 V  
CE = 5.0 V  
1.0  
mA  
---  
hFE  
V
IC = 400 mA  
10  
100  
COB  
V
CB = 30 V  
f = 1.0 MHz  
f = 175 MHz  
15  
pF  
PG  
12.0  
65  
13.0  
dB  
%
VCC =28 V  
POUT = 8.0 W  
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

BLY91C 替代型号

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