Datasheet > MRF234

MRF234

更新时间： 2024-11-19 21:55:39

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	16K
描述
NPN SILICON RF POWER TRANSISTOR

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MRF234 数据手册

MRF234

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI MRF234 is Designed for

Large-Signal Amplifier Applications to

100 MHz.

PACKAGE STYLE .380" 4L STUD

.112x45°

FEATURES:

• Common Emitter

• Omnigold™ Metalization System

• P_G= 9.5 dB min. at 25 W/ 90 MHz

ØC

MAXIMUM RATINGS

#8-32 UNC-2A

4.0 A

18 V

I_C

V_CE

V_CB

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

36 V

.220 / 5.59

.980 / 24.89

.370 / 9.40

.004 / 0.10

.320 / 8.13

.100 / 2.54

.450 / 11.43

.090 / 2.29

.155 / 3.94

.230 / 5.84

70 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

2.5 °C/W

.385 / 9.78

.007 / 0.18

.330 / 8.38

.130 / 3.30

.490 / 12.45

.100 / 2.54

.175 / 4.45

.750 / 19.05

T_STG

θ_JC

CHARACTERISTICS ^T_C= 25 ^O

SYMBOL

BV_CES

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 200 mA

I_E= 5.0 mA

V_CB= 15 V

V_CE= 5.0 V

BV_CEO

BV_EBO

I_CBO

4.0

1.0

---

h_FE

I_C= 1.0 A

5.0

C_ob

V_CB= 12.5 V

V_CC= 12.5 V

f = 1.0 MHz

f = 90 MHz

100

120

G_PE

9.5

P_out= 25 W

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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