MRF21180S

更新时间： 2024-11-05 13:11:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
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12页	520K
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MRF21180S 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF21180/D

The RF Sub-Micron MOSFET Line

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

MRF21180R6

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

2170 MHz, 170 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFET

• Typical 2-carrier W-CDMA Performance for V_DD= 28 Volts,

I_DQ= 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz,

Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over

3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products

Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz,

Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.

Output Power — 38 Watts (Avg.)

Power Gain — 12.1 dB

Efficiency — 22%

IM3 — 37.5 dBc

ACPR — -41 dBc

• Internally Input and Output Matched, for Ease of Use

• High Gain, High Efficiency, and High Linearity

• Integrated ESD Protection

CASE 375D-04, STYLE 1

NI-1230

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW)

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

380

2.17

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value (1)

Unit

Thermal Resistance, Junction to Case

0.46

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M3 (Minimum)

(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 4

MOTOROLA RF DEVICE DATA

MRF21180R6

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...12

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与MRF21180S相关器件

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MRF221	MOTOROLA	获取价格	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
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MRF224	NJSEMI	获取价格	Trans GP BJT NPN 18V 7A 4-Pin Case 211-07
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MRF230	NJSEMI	获取价格	30 W
MRF232	MOTOROLA	获取价格	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
MRF233	MOTOROLA	获取价格	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN

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