Datasheet > MRF21180

MRF21180

更新时间： 2024-11-06 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	333K
描述
RF Power Field Effect Transistor

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数据手册

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MRF21180 数据手册

Document Number: MRF21180

Rev. 6, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

MRF21180R6

• Typical 2-Carrier W-CDMA Performance for V_DD= 28 Volts,

_DQ= 1700 mA, f1 = 2135 MHz, f2 = 2145 MHz,

Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over

3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products

Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz,

Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.

Output Power — 38 Watts (Avg.)

2110-2170 MHz, 170 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFET

Power Gain — 12.1 dB

Efficiency — 22%

IM3 — 37.5 dBc

ACPR — -41 dBc

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 170 Watts CW

Output Power

Features

CASE 375D-05, STYLE 1

NI-1230

• Internally Matched for Ease of Use

• High Gain, High Efficiency, and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

380

2.17

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.46

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M3 (Minimum)

MRF21180R6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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