MRF21060SR3

更新时间： 2024-11-04 22:35:15

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体射频场效应晶体管功率场效应晶体管放大器
页数	文件大小	规格书
8页	551K
描述
RF Power Field Effect Transistors

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MRF21060SR3 技术参数

生命周期：	Transferred	包装说明：	FLATPACK, R-CDFP-F2
针数：	2	Reach Compliance Code：	unknown
风险等级：	5.19	Is Samacsys：	N
外壳连接：	SOURCE	配置：	SINGLE
最小漏源击穿电压：	65 V	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高频带：	S BAND	JESD-30 代码：	R-CDFP-F2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLATPACK	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	180 W	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

MRF21060SR3 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF21060/D

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF21060R3

MRF21060SR3

Designed for PCN and PCS base station applications with frequencies from

2.1 to 2.2 GHz. Suitable for W-CDMA, CDMA, TDMA, GSM and multicarrier

amplifier applications.

• Typical W-CDMA Performance: 2140 MHz, 28 Volts

5 MHz Offset @ 4.096 MHz BW, 15 DTCH

Output Power — 6.0 Watts

2170 MHz, 60 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 12.5 dB

Drain Efficiency — 15%

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

CASE 465-06, STYLE 1

NI-780

MRF21060R3

CASE 465A-06, STYLE 1

NI-780S

MRF21060SR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

180

0.98

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS

- 65 to +150

200

°C

stg

Characteristic

Thermal Resistance, Junction to Case

Symbol

Value

Unit

1.02

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 6

MOTOROLA RF DEVICE DATA

MRF21060R3 MRF21060SR3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7 8

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与MRF21060SR3相关器件

型号	品牌	获取价格	描述	数据表
MRF21085	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21085	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21085LR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21085LS	MOTOROLA	获取价格	暂无描述
MRF21085LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21085LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21085LSR3_08	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF21085R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21085S	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21085SR3	MOTOROLA	获取价格	RF Power Field Effect Transistors

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