Datasheet > MRF21090

MRF21090

更新时间： 2024-09-15 05:50:11

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RF Power Field Effect Transistors

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数据手册

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MRF21090 数据手册

Document Number: MRF21090

Rev. 8, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF21090R3

MRF21090SR3

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications.

• Typical W-CDMA Performance for 2140 MHz, 28 Volts

4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH:

Output Power — 11.5 Watts

2110-2170 MHz, 90 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Efficiency — 16%

Gain — 12.2 dB

ACPR — -45 dBc

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

CASE 465B-03, STYLE 1

NI-880

MRF21090R3

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF21090SR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

270

1.54

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.65

°C/W

MRF21090R3 MRF21090SR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7 8

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与MRF21090相关器件

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MRF21090R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
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