Datasheet > MRF21085LSR3

MRF21085LSR3

更新时间： 2024-11-05 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器
页数	文件大小	规格书
12页	388K
描述
RF Power Field Effect Transistors

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MRF21085LSR3 数据手册

Document Number: MRF21085

Rev. 9, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF21085LR3

MRF21085LSR3

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Typical 2-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 1000 mA,

P_out= 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84

MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 13.6 dB

2110-2170 MHz, 90 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Drain Efficiency — 23%

IM3 @ 10 MHz Offset — -37.5 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -41 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

CASE 465-06, STYLE 1

NI-780

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

MRF21085LR3

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF21085LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

224

1.28

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.78

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M3 (Minimum)

MRF21085LR3 MRF21085LSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF21085LSR3相关器件

型号	品牌	获取价格	描述	数据表
MRF21085LSR3_08	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF21085R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21085S	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21085SR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21090	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21090	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21090R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21090R3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21090R3_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21090S	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-880S, CASE 465C-02, 2 PIN

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