MRF21085S

更新时间： 2024-11-05 13:11:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体射频场效应晶体管功率场效应晶体管放大器局域网
页数	文件大小	规格书
12页	562K
描述
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 465A-06, 3 PIN

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MRF21085S 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	FLATPACK, R-CDFP-F2	Reach Compliance Code：	unknown
风险等级：	5.89	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	65 V
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	S BAND
JESD-30 代码：	R-CDFP-F2	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLATPACK	峰值回流温度（摄氏度）：	225
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

MRF21085S 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF21085/D

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

MRF21085R3

MRF21085SR3

MRF21085LSR3

2170 MHz, 90 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

• Typical 2-carrier W-CDMA Performance for V_DD= 28 Volts,

I_DQ= 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =

3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz

and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW

@ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability

on CCDF.

Output Power — 19 Watts Avg.

Power Gain — 13.6 dB

Efficiency — 23%

IM3 — -37.5 dBc

ACPR — -41 dBc

CASE 465-06, STYLE 1

NI-780

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

MRF21085R3

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

CASE 465A-06, STYLE 1

NI-780S

MRF21085SR3, MRF21085LSR3

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

224

1.28

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Value (1)

Unit

0.78

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M3 (Minimum)

(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 6

MOTOROLA RF DEVICE DATA

MRF21085R3 MRF21085SR3 MRF21085LSR3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...12

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与MRF21085S相关器件

型号	品牌	获取价格	描述	数据表
MRF21085SR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21090	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21090	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21090R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21090R3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21090R3_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21090S	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-880S, CASE 465C-02, 2 PIN
MRF21090SR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21090SR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21120	MOTOROLA	获取价格	The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode L

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