Document Number: MRF21085
Rev. 11, 10/2008
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
MRF21085LSR3
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA,
P
out = 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
2110-2170 MHz, 90 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFET
Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13.6 dB
Drain Efficiency — 23%
IM3 @ 10 MHz Offset — -37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -41 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
CASE 465A-06, STYLE 1
NI-780S
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
-0.5, +65
-0.5, +15
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
224
1.28
W
W/°C
C
D
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
T
- 65 to +150
150
°C
°C
°C
stg
T
C
T
200
J
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.78
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
Machine Model
1 (Minimum)
M3 (Minimum)
© Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF21085LSR3
RF Device Data
Freescale Semiconductor
1