MRF21085LS

更新时间： 2024-11-05 13:11:51

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MRF21085LS 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF21085/D

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

MRF21085R3

MRF21085SR3

MRF21085LSR3

2170 MHz, 90 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

• Typical 2-carrier W-CDMA Performance for V_DD= 28 Volts,

I_DQ= 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =

3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz

and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW

@ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability

on CCDF.

Output Power — 19 Watts Avg.

Power Gain — 13.6 dB

Efficiency — 23%

IM3 — -37.5 dBc

ACPR — -41 dBc

CASE 465-06, STYLE 1

NI-780

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

MRF21085R3

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

CASE 465A-06, STYLE 1

NI-780S

MRF21085SR3, MRF21085LSR3

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

224

1.28

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Value (1)

Unit

0.78

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M3 (Minimum)

(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 6

MOTOROLA RF DEVICE DATA

MRF21085R3 MRF21085SR3 MRF21085LSR3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...12

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与MRF21085LS相关器件

型号	品牌	获取价格	描述	数据表
MRF21085LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21085LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21085LSR3_08	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF21085R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21085S	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21085SR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21090	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21090	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21090R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21090R3	FREESCALE	获取价格	RF Power Field Effect Transistors

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