Datasheet > MRF21045S

MRF21045S

更新时间： 2024-11-05 20:11:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
8页	133K
描述
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 465F-03, 3 PIN

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MRF21045S 技术参数

生命周期：	Obsolete	包装说明：	FLATPACK, R-CDFP-F2
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.14	Base Number Matches：	1

MRF21045S 数据手册

M OT O RO LA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

MR F 21045

MR F 2104 5R 3

MR F 21045 S

Tr a ns is to r s

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for W–CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN–PCS/cellular radio and WLL

applications.

•

Typical 2–carrier W–CDMA Performance for V_DD= 28 Volts, I_DQ= 500 mA,

f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,

Adjacent Channels measured over 3.84 MHz Bandwidth at f1 –5 MHz

and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth

at f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability

on CCDF.

2170 MHz, 45 W, 28 V

LATERAL N–CHANNEL

BROADBAND

RF POWER MOSFETs

Output Power — 10 Watts Avg.

Efficiency — 23.5%

Gain — 15 dB

IM3 — –37.5 dBc

ACPR — –41 dBc

•

Internally Matched, Controlled Q, for Ease of Use

High Gain, High Efficiency and High Linearity

Integrated ESD Protection

Designed for Maximum Gain and Insertion Phase Flatness

Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW

Output Power

CASE 465E–03, STYLE 1

(NI–400)

(MRF21045)

•

Excellent Thermal Stability

Characterized with Series Equivalent Large–Signal Impedance Parameters

Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch

Reel.

CASE 465F–03, STYLE 1

(NI–400S)

(MRF21045S)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

+15, –0.5

Total Device Dissipation @ T = 25°C

105

Watts

Derate above 25°C

0.60

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +200

200

°C

stg

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M2 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

1.65

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 3

MOTOROLA WIRELESS

RF PRODUCT DEVICE DATA

MRF21045 MRF21045R3 MRF21045S MRF21045SR3

5.2–295

12 3 4 5 6 7 8

中文翻译

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与MRF21045S相关器件

型号	品牌	获取价格	描述	数据表
MRF21045SR3	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21060	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21060	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21060LR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21060LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21060LSR3	NXP	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
MRF21060R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21060S	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21060SR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21085	FREESCALE	获取价格	RF Power Field Effect Transistors

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