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MRF21045LR3 PDF预览

MRF21045LR3

更新时间： 2024-11-14 22:34:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频场效应晶体管功率场效应晶体管放大器局域网
页数 文件大小 规格书
12页 550K
描述
RF Power Field Effect Transistors

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MRF21045LR3 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-CDFM-F2
针数：2Reach Compliance Code：unknown
风险等级：5.14Is Samacsys：N
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：65 VFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：S BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：200 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：105 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

MRF21045LR3 数据手册

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MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MRF21045/D  
The RF MOSFET Line  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
Designed for W-CDMA base station applications with frequencies from 2110  
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-  
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL  
applications.  
MRF21045LR3  
MRF21045LSR3  
• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,  
f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,  
Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz  
and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth  
at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability  
on CCDF.  
2170 MHz, 45 W, 28 V  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Output Power — 10 Watts Avg.  
Efficiency — 23.5%  
Gain — 15 dB  
IM3 — -37.5 dBc  
ACPR — -41 dBc  
• Internally Matched, Controlled Q, for Ease of Use  
• High Gain, High Efficiency and High Linearity  
• Integrated ESD Protection  
CASE 465E-04, STYLE 1  
NI-400  
MRF21045LR3  
• Designed for Maximum Gain and Insertion Phase Flatness  
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW  
Output Power  
• Excellent Thermal Stability  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.  
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.  
CASE 465F-04, STYLE 1  
NI-400S  
MRF21045LSR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
-0.5, +15  
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
105  
0.60  
Watts  
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
T
- 65 to +150  
200  
°C  
°C  
stg  
T
J
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
Machine Model  
1 (Minimum)  
M2 (Minimum)  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
θ
JC  
1.65  
°C/W  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
Rev. 9  
Motorola, Inc. 2004  
For More Information On This Product,  
Go to: www.freescale.com  
 
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