Datasheet > MRF21045S

MRF21045S

更新时间： 2024-09-15 20:56:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	545K
描述
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391B

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MRF21045S 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.83	配置：	Single
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	200 °C	极性/信道类型：	N-CHANNEL
子类别：	FET General Purpose Power	Base Number Matches：	1

MRF21045S 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF21045/D

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

MRF21045LR3

MRF21045LSR3

• Typical 2-carrier W-CDMA Performance for V_DD= 28 Volts, I_DQ= 500 mA,

f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,

Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz

and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth

at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability

on CCDF.

2170 MHz, 45 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Output Power — 10 Watts Avg.

Efficiency — 23.5%

Gain — 15 dB

IM3 — -37.5 dBc

ACPR — -41 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

CASE 465E-04, STYLE 1

NI-400

MRF21045LR3

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

CASE 465F-04, STYLE 1

NI-400S

MRF21045LSR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

105

0.60

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M2 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

1.65

°C/W

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Rev. 9

MOTOROLA RF DEVICE DATA

MRF21045LR3 MRF21045LSR3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...12

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与MRF21045S相关器件

型号	品牌	获取价格	描述	数据表
MRF21045SR3	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21060	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21060	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21060LR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21060LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21060LSR3	NXP	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
MRF21060R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21060S	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21060SR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21085	FREESCALE	获取价格	RF Power Field Effect Transistors

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