Datasheet > MRF21045SR3

MRF21045SR3

更新时间： 2024-11-05 15:44:19

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
12页	389K
描述
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, NI-400S, CASE 465F-04, 2 PIN

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MRF21045SR3 数据手册

ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF21045/D

The RF MOSFET Line

ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ

N–Channel Enhancement–Mode Lateral MOSFETs

ꢒ

ꢀ

ꢁ

ꢖ

ꢗ

ꢘ

ꢙ

ꢚ

ꢀ

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ꢒꢀ ꢁ ꢖꢗꢘꢙꢚ ꢜꢀꢛ

Designed for W–CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN–PCS/cellular radio and WLL

applications.

• Typical 2–carrier W–CDMA Performance for V_DD= 28 Volts, I_DQ= 500 mA,

f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,

Adjacent Channels measured over 3.84 MHz Bandwidth at f1 –5 MHz

and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth

at f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability

on CCDF.

2170 MHz, 45 W, 28 V

LATERAL N–CHANNEL

RF POWER MOSFETs

Output Power — 10 Watts Avg.

Efficiency — 23.5%

Gain — 15 dB

IM3 — –37.5 dBc

ACPR — –41 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

CASE 465E–04, STYLE 1

NI–400

MRF21045R3

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

CASE 465F–04, STYLE 1

NI–400S

MRF21045SR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

–0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

105

0.60

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +150

200

°C

stg

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M2 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

1.65

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 6

MOTOROLA RF DEVICE DATA

MRF21045R3 MRF21045SR3

 Motorola, Inc. 2003

12 3 4 5 6 7...12

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与MRF21045SR3相关器件

型号	品牌	获取价格	描述	数据表
MRF21060	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21060	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21060LR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21060LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21060LSR3	NXP	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
MRF21060R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21060S	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21060SR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21085	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21085	MOTOROLA	获取价格	RF Power Field Effect Transistors

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