Datasheet > MRF21045LSR3

MRF21045LSR3

更新时间： 2024-11-15 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器
页数	文件大小	规格书
12页	384K
描述
RF Power Field Effect Transistors

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MRF21045LSR3 数据手册

Document Number: MRF21045

Rev. 11, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

MRF21045LR3

MRF21045LSR3

• Typical 2-carrier W-CDMA Performance for V_DD= 28 Volts, I_DQ= 500 mA,

f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,

Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz

and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth

at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability

on CCDF.

2110-2170 MHz, 45 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Output Power — 10 Watts Avg.

Efficiency — 23.5%

Gain — 15 dB

IM3 — -37.5 dBc

ACPR — -41 dBc

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

CASE 465E-04, STYLE 1

NI-400

MRF21045LR3

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

CASE 465F-04, STYLE 1

NI-400S

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

MRF21045LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

105

0.60

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

(1)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.65

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M2 (Minimum)

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF21045LR3 MRF21045LSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF21045LSR3相关器件

型号	品牌	获取价格	描述	数据表
MRF21045R3	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400, CASE 465E-04, 2 PIN
MRF21045R3	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR
MRF21045S	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21045S	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391B
MRF21045SR3	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21060	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21060	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21060LR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21060LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21060LSR3	NXP	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN

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