Datasheet > MRF21045LR3_08

MRF21045LR3_08

更新时间： 2024-11-15 10:47:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
11页	472K
描述
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF21045LR3_08 数据手册

Document Number: MRF21045

Rev. 12, 10/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W--CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN--PCS/cellular radio and WLL

applications.

MRF21045LR3

MRF21045LSR3

•

Typical 2--carrier W--CDMA Performance for V_DD= 28 Volts, I_DQ= 500 mA,

f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels

measured over 3.84 MHz Bandwidth at f1 --5 MHz and f2 +5 MHz,

Distortion Products measured over a 3.84 MHz Bandwidth at f1 --10 MHz

and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.

Output Power — 10 Watts Avg.

2110--2170 MHz, 45 W, 28 V

LATERAL N--CHANNEL

RF POWER MOSFETs

Efficiency — 23.5%

Gain — 15 dB

IM3 — --37.5 dBc

ACPR — --41 dBc

•

Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW

Output Power

Features

•

Internally Matched for Ease of Use

High Gain, High Efficiency and High Linearity

Integrated ESD Protection

Designed for Maximum Gain and Insertion Phase Flatness

Excellent Thermal Stability

Characterized with Series Equivalent Large--Signal Impedance Parameters

Low Gold Plating Thickness on Leads, 40µ″ Nominal.

RoHS Compliant

CASE 465E--04, STYLE 1

NI--400

MRF21045LR3

In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

CASE 465F--04, STYLE 1

NI--400S

MRF21045LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain--Source Voltage

Gate--Source Voltage

--0.5, +65

--0.5, +15

DSS

Total Device Dissipation @ T = 25°C

105

Derate above 25°C

0.60

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

--65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

(1)

Characteristic

Thermal Resistance, Junction to Case

Table 3. ESD Protection Characteristics

Test Conditions

Symbol

Value

Unit

1.65

°C/W

Class

Human Body Model

Machine Model

1 (Minimum)

M2 (Minimum)

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF21045LR3 MRF21045LSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...11

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与MRF21045LR3_08相关器件

型号	品牌	获取价格	描述	数据表
MRF21045LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21045LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21045R3	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400, CASE 465E-04, 2 PIN
MRF21045R3	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR
MRF21045S	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21045S	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391B
MRF21045SR3	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21060	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21060	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21060LR3	FREESCALE	获取价格	RF Power Field Effect Transistors

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